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Infineon FF11MR12W2M1H_B70 Type N-Channel MOSFET, 75 A, 1200 V Enhancement EasyPACK FF11MR12W2M1HB70BPSA1

RS 제품 번호:: 348-975
제조사 부품 번호:: FF11MR12W2M1HB70BPSA1
제조업체:: Infineon

Infineon FF11MR12W2M1H_B70 Type N-Channel MOSFET, 75 A, 1200 V Enhancement EasyPACK FF11MR12W2M1HB70BPSA1

Subtotal (1 unit)*

₩447,191.84

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15 개 단위 배송 준비 완료

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* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 348-975
제조사 부품 번호:: FF11MR12W2M1HB70BPSA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	75A
	Maximum Drain Source Voltage Vds	1200V
	Series	FF11MR12W2M1H_B70
	Package Type	EasyPACK
	Mount Type	Screw
	Maximum Drain Source Resistance Rds	20.1mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	5.35V
	Minimum Operating Temperature	-40°C
	Maximum Power Dissipation Pd	20mW
	Maximum Gate Source Voltage Vgs	23 V
	Maximum Operating Temperature	150°C
	Standards/Approvals	IEC 60749, IEC 60747, IEC 60068
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 75A
	Maximum Drain Source Voltage Vds 1200V
	Series FF11MR12W2M1H_B70
	Package Type EasyPACK
	Mount Type Screw
	Maximum Drain Source Resistance Rds 20.1mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 5.35V
	Minimum Operating Temperature -40°C
	Maximum Power Dissipation Pd 20mW
	Maximum Gate Source Voltage Vgs 23 V
	Maximum Operating Temperature 150°C
	Standards/Approvals IEC 60749, IEC 60747, IEC 60068
	Automotive Standard No

Datasheet - FF11MR12W2M1HB70BPSA1

COO (Country of Origin):: DE

The Infineon EasyDUAL 2B CoolSiC MOSFET Half-Bridge Module combines cutting-edge technology with superior design for high performance power applications. With a best-in-class packaging and a compact 12.25 mm height, it optimizes both space and performance. The module utilizes leading-edge Wide Bandgap (WBG) material, providing enhanced power efficiency, thermal performance, and reliability. Its very low module stray inductance minimizes power losses and improves switching behaviour.

Outstanding module efficiency

System cost advantages

System efficiency improvement

Reduced cooling requirements

Enabling higher frequency

Increase of power density

Better thermal conductivity of DCB material

Infineon FF11MR12W2M1H_B70 Type N-Channel MOSFET, 75 A, 1200 V Enhancement EasyPACK FF11MR12W2M1HB70BPSA1

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