Infineon F3L6MR Type N-Channel MOSFET, 375 A, 2000 V Enhancement AG-EASY2B F3L6MR20W2M1HB70BPSA1
- RS 제품 번호:
- 351-915
- 제조사 부품 번호:
- F3L6MR20W2M1HB70BPSA1
- 제조업체:
- Infineon
Subtotal (1 unit)*
₩942,741.04
재고있음
- 15 개 단위 배송 준비 완료
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수량 | 한팩당 |
|---|---|
| 1 + | ₩942,741.04 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 351-915
- 제조사 부품 번호:
- F3L6MR20W2M1HB70BPSA1
- 제조업체:
- Infineon
사양
참조 문서
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제품 세부 사항
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 375A | |
| Maximum Drain Source Voltage Vds | 2000V | |
| Package Type | AG-EASY2B | |
| Series | F3L6MR | |
| Mount Type | Through Hole | |
| Maximum Drain Source Resistance Rds | 7.8mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 20mW | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -40°C | |
| Forward Voltage Vf | 6.15V | |
| Maximum Operating Temperature | 175°C | |
| Height | 12.255mm | |
| Length | 62.8mm | |
| Width | 48 mm | |
| Standards/Approvals | IEC 60747, IEC 60068, IEC 60749 | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 375A | ||
Maximum Drain Source Voltage Vds 2000V | ||
Package Type AG-EASY2B | ||
Series F3L6MR | ||
Mount Type Through Hole | ||
Maximum Drain Source Resistance Rds 7.8mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 20mW | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -40°C | ||
Forward Voltage Vf 6.15V | ||
Maximum Operating Temperature 175°C | ||
Height 12.255mm | ||
Length 62.8mm | ||
Width 48 mm | ||
Standards/Approvals IEC 60747, IEC 60068, IEC 60749 | ||
Automotive Standard No | ||
The Infineon Easy pack 2B CoolSiC MOSFET 3-level module 2000 V, 6 mΩ with NTC temperature sensor, Press FIT Contact Technology and aluminum nitride ceramic.
Very low module stray inductance
Press FIT pins
Integrated NTC temperature sensor
Wide gate source voltage range
Low switching & conduction losses
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