Infineon IPQ Type N-Channel MOSFET, 30 A, 600 V Enhancement, 22-Pin PG-HDSOP-22 IPQC60T017S7XTMA1
- RS 제품 번호:
- 349-004
- 제조사 부품 번호:
- IPQC60T017S7XTMA1
- 제조업체:
- Infineon
대량 구매 할인 기용 가능
Subtotal (1 unit)*
₩30,890.28
일시적 품절
- 2026년 5월 04일 부터 배송
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수량 | 한팩당 |
|---|---|
| 1 - 9 | ₩30,890.28 |
| 10 - 99 | ₩27,810.84 |
| 100 + | ₩25,645.08 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 349-004
- 제조사 부품 번호:
- IPQC60T017S7XTMA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | IPQ | |
| Package Type | PG-HDSOP-22 | |
| Mount Type | Surface | |
| Pin Count | 22 | |
| Maximum Drain Source Resistance Rds | 17mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.82V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Typical Gate Charge Qg @ Vgs | 196nC | |
| Maximum Power Dissipation Pd | 500W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, JEDEC | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series IPQ | ||
Package Type PG-HDSOP-22 | ||
Mount Type Surface | ||
Pin Count 22 | ||
Maximum Drain Source Resistance Rds 17mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.82V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Typical Gate Charge Qg @ Vgs 196nC | ||
Maximum Power Dissipation Pd 500W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, JEDEC | ||
- COO (Country of Origin):
- MY
The Infineon CoolMOS S7T enables the best price performance for low frequency switching applications. The embedded temperature sensor increases junction temperature sensing accuracy and robustness while keeping an easy and seamless implementation. CoolMOS S7T is optimized for static switching and high current applications. The new temperature sensor enhances S7 features, allowing the best possible utilization of the power transistor.
Increased system performance
Increased system performance
More compact and more straightforward design
Lower BOM or TCO over a prolonged lifetime
More reliability and longer system lifetime
관련된 링크들
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