Infineon ISZ Type N-Channel MOSFET, 63 A, 100 V Enhancement, 8-Pin PG-TSDSON-8 ISZ113N10NM5LF2ATMA1
- RS 제품 번호:
- 349-154
- 제조사 부품 번호:
- ISZ113N10NM5LF2ATMA1
- 제조업체:
- Infineon
대량 구매 할인 기용 가능
Subtotal (1 pack of 5 units)*
₩17,399.40
재고있음
- 5,000 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 5 - 45 | ₩3,479.88 | ₩17,403.16 |
| 50 - 95 | ₩3,305.04 | ₩16,527.08 |
| 100 - 495 | ₩3,064.40 | ₩15,320.12 |
| 500 - 995 | ₩2,818.12 | ₩14,092.48 |
| 1000 + | ₩2,714.72 | ₩13,571.72 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 349-154
- 제조사 부품 번호:
- ISZ113N10NM5LF2ATMA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 63A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | ISZ | |
| Package Type | PG-TSDSON-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 11.3mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 100W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC61249‑2‑21, JEDEC, RoHS | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 63A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series ISZ | ||
Package Type PG-TSDSON-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 11.3mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 100W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC61249‑2‑21, JEDEC, RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon OptiMOS Linear FET is a revolutionary approach that solves the trade-off between on-state resistance and linear mode capability. Combined with the low cost, low profile PQFN 3.3x3.3 package, it is targeted for soft start and current limiting purpose in Power over Ethernet (PoE) application.
Wide safe operating area
Low RDS(on)
High max. pulse current
High max. continuous current
Available in small low profile package
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