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Infineon ISZ Type N-Channel Power Transistor, 54 A, 135 V Enhancement, 8-Pin PG-TSDSON-8FL ISZ143N13NM6ATMA1

RS 제품 번호:: 349-155
제조사 부품 번호:: ISZ143N13NM6ATMA1
제조업체:: Infineon

Infineon ISZ Type N-Channel Power Transistor, 54 A, 135 V Enhancement, 8-Pin PG-TSDSON-8FL ISZ143N13NM6ATMA1

대량 구매 할인 기용 가능

Subtotal (1 pack of 5 units)*

₩21,751.60

재고있음

추가로 2026년 1월 12일 부터 4,980 개 단위 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	한팩당*
5 - 45	₩4,350.32	₩21,753.48
50 - 95	₩4,134.12	₩20,670.60
100 +	₩3,829.56	₩19,151.56

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 349-155
제조사 부품 번호:: ISZ143N13NM6ATMA1
제조업체:: Infineon

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	Power Transistor
	Maximum Continuous Drain Current Id	54A
	Maximum Drain Source Voltage Vds	135V
	Package Type	PG-TSDSON-8FL
	Series	ISZ
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	14.3mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	1V
	Typical Gate Charge Qg @ Vgs	21nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	95W
	Maximum Operating Temperature	175°C
	Standards/Approvals	IEC61249‑2‑21, JEDEC, J-STD-020, RoHS
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type Power Transistor
	Maximum Continuous Drain Current Id 54A
	Maximum Drain Source Voltage Vds 135V
	Package Type PG-TSDSON-8FL
	Series ISZ
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 14.3mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 1V
	Typical Gate Charge Qg @ Vgs 21nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 95W
	Maximum Operating Temperature 175°C
	Standards/Approvals IEC61249‑2‑21, JEDEC, J-STD-020, RoHS
	Automotive Standard No

Datasheet - ISZ143N13NM6ATMA1

COO (Country of Origin):: CN

The Infineon OptiMOS 6 power MOSFET 135 V Normal Level in PQFN 3.3x3.3 package. OptiMOS 6 135 V targets high power motor drive applications such as LEVs, e-forklifts, power and gardening tools, but also UPS applications which predominantly use 72 to 84 V batteries. This product effectively bridges the gap between the 120 V and 150 V MOSFETs and provides significant improvements in RDS(on) and cost, helping improve the system efficiency.

System cost reduction

Less paralleling required

Reduced VDS overshoot and switching losses

Higher power density designs

Infineon ISZ Type N-Channel Power Transistor, 54 A, 135 V Enhancement, 8-Pin PG-TSDSON-8FL ISZ143N13NM6ATMA1

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