Infineon ISZ Type N-Channel Power Transistor, 109 A, 30 V Enhancement, 8-Pin PG-TSDSON-8 ISZ033N03LF2SATMA1
- RS 제품 번호:
- 348-903
- 제조사 부품 번호:
- ISZ033N03LF2SATMA1
- 제조업체:
- Infineon
대량 구매 할인 기용 가능
Subtotal (1 pack of 10 units)*
₩14,274.00
재고있음
- 추가로 2026년 5월 11일 부터 5,000 개 단위 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 10 - 90 | ₩1,427.40 | ₩14,274.00 |
| 100 - 240 | ₩1,355.25 | ₩13,552.50 |
| 250 - 490 | ₩1,255.80 | ₩12,558.00 |
| 500 - 990 | ₩1,154.40 | ₩11,544.00 |
| 1000 + | ₩1,113.45 | ₩11,134.50 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 348-903
- 제조사 부품 번호:
- ISZ033N03LF2SATMA1
- 제조업체:
- Infineon
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | Type N | |
| Product Type | Power Transistor | |
| Maximum Continuous Drain Current Id | 109A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | ISZ | |
| Package Type | PG-TSDSON-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3.3mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 71W | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 21nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC61249‑2‑21, RoHS, JEDEC | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type Type N | ||
Product Type Power Transistor | ||
Maximum Continuous Drain Current Id 109A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series ISZ | ||
Package Type PG-TSDSON-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3.3mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 71W | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 21nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC61249‑2‑21, RoHS, JEDEC | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Infineon StrongIRFET 2 power MOSFET 30 V in PQFN 3.3 x 3.3 package. Infineon’s StrongIRFET 2 power MOSFET 30 V technology features a best-in-class RDS(on) of 3.3 mOhm in a PQFN 3.3 x 3.3 package. This product addresses a broad range of applications from low to high switching frequency.
General purpose products
Excellent robustness
Superior price/performance ratio
Broad availability at distributors
Standard packages and pin out
High manufacturing and supply standards
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