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Infineon ISZ Type N-Channel Power Transistor, 109 A, 30 V Enhancement, 8-Pin PG-TSDSON-8 ISZ033N03LF2SATMA1

RS 제품 번호:: 348-903
제조사 부품 번호:: ISZ033N03LF2SATMA1
제조업체:: Infineon

Infineon ISZ Type N-Channel Power Transistor, 109 A, 30 V Enhancement, 8-Pin PG-TSDSON-8 ISZ033N03LF2SATMA1

대량 구매 할인 기용 가능

Subtotal (1 pack of 10 units)*

₩13,761.60

재고있음

5,000 개 단위 배송 준비 완료

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	한팩당*
10 - 90	₩1,376.16	₩13,759.72
100 - 240	₩1,306.60	₩13,071.64
250 - 490	₩1,210.72	₩12,114.72
500 - 990	₩1,112.96	₩11,137.12
1000 +	₩1,073.48	₩10,740.44

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 348-903
제조사 부품 번호:: ISZ033N03LF2SATMA1
제조업체:: Infineon

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	Power Transistor
	Maximum Continuous Drain Current Id	109A
	Maximum Drain Source Voltage Vds	30V
	Package Type	PG-TSDSON-8
	Series	ISZ
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	3.3mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1V
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	71W
	Typical Gate Charge Qg @ Vgs	21nC
	Maximum Operating Temperature	175°C
	Standards/Approvals	IEC61249‑2‑21, RoHS, JEDEC
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type Power Transistor
	Maximum Continuous Drain Current Id 109A
	Maximum Drain Source Voltage Vds 30V
	Package Type PG-TSDSON-8
	Series ISZ
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 3.3mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1V
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 71W
	Typical Gate Charge Qg @ Vgs 21nC
	Maximum Operating Temperature 175°C
	Standards/Approvals IEC61249‑2‑21, RoHS, JEDEC
	Automotive Standard No

Datasheet - ISZ033N03LF2SATMA1

COO (Country of Origin):: CN

The Infineon StrongIRFET 2 power MOSFET 30 V in PQFN 3.3 x 3.3 package. Infineon’s StrongIRFET 2 power MOSFET 30 V technology features a best-in-class RDS(on) of 3.3 mOhm in a PQFN 3.3 x 3.3 package. This product addresses a broad range of applications from low to high switching frequency.

General purpose products

Excellent robustness

Superior price/performance ratio

Broad availability at distributors

Standard packages and pin out

High manufacturing and supply standards

Infineon ISZ Type N-Channel Power Transistor, 109 A, 30 V Enhancement, 8-Pin PG-TSDSON-8 ISZ033N03LF2SATMA1

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