Infineon ISZ Type N-Channel Power Transistor, 26 A, 200 V Enhancement, 8-Pin PG-TSDSON-8FL ISZ520N20NM6ATMA1

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Subtotal (1 pack of 5 units)*

₩15,754.40

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  • 2026년 4월 17일 부터 배송
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한팩당*
5 - 45₩3,150.88₩15,758.16
50 - 95₩2,992.96₩14,966.68
100 - 495₩2,773.00₩13,863.12
500 - 995₩2,551.16₩12,759.56
1000 +₩2,457.16₩12,282.04

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:
349-157
제조사 부품 번호:
ISZ520N20NM6ATMA1
제조업체:
Infineon
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브랜드

Infineon

Channel Type

Type N

Product Type

Power Transistor

Maximum Continuous Drain Current Id

26A

Maximum Drain Source Voltage Vds

200V

Series

ISZ

Package Type

PG-TSDSON-8FL

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

52mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

88W

Typical Gate Charge Qg @ Vgs

9.9nC

Forward Voltage Vf

1V

Maximum Operating Temperature

175°C

Standards/Approvals

IEC61249‑2‑21, JEDEC, J-STD-020, RoHS

Automotive Standard

No

COO (Country of Origin):
MY
The Infineon OptiMOS 6 MOSFET is setting the new technology standard. It addresses the need for high power density, high efficiency, and high reliability. The OptiMOS 6 200 V technology was designed for optimal performance in motor drive applications such as LEV, forklifts, and drones. The new OptiMOS 6 features industry leading RDS(on), improved switching and current sharing capability, enabling high power density, less paralleling, and excellent EMI performance.

Low conduction losses

Low switching losses

Stable operation with improved EMI

Less paralleling required

Better current sharing when paralleling

Environmentally friendly

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