Infineon ISZ Type N-Channel Power Transistor, 128 A, 30 V Enhancement, 8-Pin PG-TSDSON-8 ISZ028N03LF2SATMA1

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Subtotal (1 pack of 10 units)*

₩18,612.00

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한팩당
한팩당*
10 - 90₩1,861.20₩18,610.12
100 - 240₩1,767.20₩17,672.00
250 - 490₩1,637.48₩16,382.32
500 - 990₩1,507.76₩15,070.08
1000 +₩1,451.36₩14,507.96

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:
348-902
제조사 부품 번호:
ISZ028N03LF2SATMA1
제조업체:
Infineon
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브랜드

Infineon

Channel Type

Type N

Product Type

Power Transistor

Maximum Continuous Drain Current Id

128A

Maximum Drain Source Voltage Vds

30V

Package Type

PG-TSDSON-8

Series

ISZ

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

2.8mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

83W

Typical Gate Charge Qg @ Vgs

21nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

IEC61249‑2‑21, JEDEC, RoHS

Automotive Standard

No

COO (Country of Origin):
CN
The Infineon StrongIRFET 2 power MOSFET 30 V in PQFN 3.3 x 3.3 package. Its features a best-in-class RDS(on) of 2.8 mOhm in a PQFN 3.3 x 3.3 package. This product addresses a broad range of applications from low to high switching frequency. Compared to the previous technology, its achieves up to 40% RDS(on) improvement while having up to 60% FOM enhancement and excellent robustness.

General purpose products

Excellent robustness

Superior price/performance ratio

Broad availability at distributors

Standard packages and pin out

High manufacturing and supply standards

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