Infineon ISC Type N-Channel MOSFET, 63 A, 40 V, 8-Pin TDSON-8 FL ISC058N04NM5ATMA1
- RS 제품 번호:
- 234-7005
- 제조사 부품 번호:
- ISC058N04NM5ATMA1
- 제조업체:
- Infineon
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대량 구매 할인 기용 가능
Subtotal (1 reel of 5000 units)*
₩2,491,000.00
일시적 품절
- 2026년 6월 22일 부터 배송
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수량 | 한팩당 | 릴당* |
|---|---|---|
| 5000 - 5000 | ₩498.20 | ₩2,493,820.00 |
| 10000 - 10000 | ₩488.80 | ₩2,444,000.00 |
| 15000 + | ₩473.76 | ₩2,370,680.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 234-7005
- 제조사 부품 번호:
- ISC058N04NM5ATMA1
- 제조업체:
- Infineon
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제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 63A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TDSON-8 FL | |
| Series | ISC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 5.8mΩ | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 42W | |
| Typical Gate Charge Qg @ Vgs | 16nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 4.4mm | |
| Length | 3.8mm | |
| Width | 1.1 mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 63A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TDSON-8 FL | ||
Series ISC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 5.8mΩ | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 42W | ||
Typical Gate Charge Qg @ Vgs 16nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 4.4mm | ||
Length 3.8mm | ||
Width 1.1 mm | ||
Automotive Standard No | ||
The Infineon OptiMOS 5 power transistor N-channel MOSFET has 40V drain source breakdown voltage and 63A continuous drain current. This product offers a Benchmark solution for applications requiring normal level (higher threshold voltage) drive capability. The high Vth in the normal level portfolio offers immunity to false turn-on due to noisy environments. In addition, lower QGD/QGS ratios reduce the Peak of the gate voltage spikes, further contributing to the robustness against unwanted turn-on.
Battery powered application
LV motor drives
Very low on-resistanceRDS(on)
100% avalanche tested
175°C junction temperature
Superior thermal resistance
Low gate charge
Reduced switching losses
Suitable for operation at higher frequencies
N-channel
Pb-free lead plating
RoHS compliant
Halogen-free according to IEC61249-2-21
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