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Infineon OptiMOS-TM6 Type N-Channel MOSFET, 39 A, 200 V Enhancement, 3-Pin PG-TO263-3 IPB339N20NM6ATMA1

RS 제품 번호:: 349-401
제조사 부품 번호:: IPB339N20NM6ATMA1
제조업체:: Infineon

Infineon OptiMOS-TM6 Type N-Channel MOSFET, 39 A, 200 V Enhancement, 3-Pin PG-TO263-3 IPB339N20NM6ATMA1

대량 구매 할인 기용 가능

Subtotal (1 pack of 5 units)*

₩29,892.00

재고있음

1,000 개 단위 배송 준비 완료

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	한팩당*
5 - 45	₩5,978.40	₩29,892.00
50 - 95	₩5,679.48	₩28,393.64
100 +	₩5,262.12	₩26,312.48

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 349-401
제조사 부품 번호:: IPB339N20NM6ATMA1
제조업체:: Infineon

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	39A
	Maximum Drain Source Voltage Vds	200V
	Package Type	PG-TO263-3
	Series	OptiMOS-TM6
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	33.9mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	125W
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	15.9nC
	Maximum Operating Temperature	175°C
	Standards/Approvals	DIN IEC 68-1: 55/175/56, IEC61249-2-21, RoHS
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 39A
	Maximum Drain Source Voltage Vds 200V
	Package Type PG-TO263-3
	Series OptiMOS-TM6
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 33.9mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 125W
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 15.9nC
	Maximum Operating Temperature 175°C
	Standards/Approvals DIN IEC 68-1: 55/175/56, IEC61249-2-21, RoHS
	Automotive Standard No

Datasheet - IPB339N20NM6ATMA1

COO (Country of Origin):: MY

The Infineon OptiMOS 6 Power Transistor, 200 V is an N-channel, normal level MOSFET designed for high efficiency power applications. It offers very low on resistance (RDS(on)), ensuring minimal conduction losses. With an excellent gate charge x RDS(on) product (FOM), it delivers superior switching performance. This MOSFET also features very low reverse recovery charge (Qrr), enhancing overall efficiency.

Pb free lead plating

RoHS compliant

Halogen free according to IEC61249-2-21

MSL 1 classified according to J-STD-020

Infineon OptiMOS-TM6 Type N-Channel MOSFET, 39 A, 200 V Enhancement, 3-Pin PG-TO263-3 IPB339N20NM6ATMA1

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