Infineon FS3L40R07W2H5F_B70 Type P-Channel MOSFET Depletion EasyPACK 2B FS3L40R07W2H5FB70BPSA1
- RS 제품 번호:
- 348-982
- 제조사 부품 번호:
- FS3L40R07W2H5FB70BPSA1
- 제조업체:
- Infineon
Subtotal (1 unit)*
₩288,824.40
일시적 품절
- 2027년 11월 22일 부터 배송
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수량 | 한팩당 |
|---|---|
| 1 + | ₩288,824.40 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 348-982
- 제조사 부품 번호:
- FS3L40R07W2H5FB70BPSA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Series | FS3L40R07W2H5F_B70 | |
| Package Type | EasyPACK 2B | |
| Mount Type | Screw | |
| Channel Mode | Depletion | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 2.15V | |
| Maximum Power Dissipation Pd | 20mW | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | 60068, 60749, IEC 60747 | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Series FS3L40R07W2H5F_B70 | ||
Package Type EasyPACK 2B | ||
Mount Type Screw | ||
Channel Mode Depletion | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 2.15V | ||
Maximum Power Dissipation Pd 20mW | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals 60068, 60749, IEC 60747 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- DE
The Infineon EasyPACK 2B 650 V 40 A 3-Level NPC1 Full-Bridge IGBT Module is designed for high efficiency power applications, featuring CoolSiC Schottky Diode Gen 5 and TRENCHSTOP 5 H5 technology. This module offers increased blocking voltage capability of up to 650 V, providing enhanced performance in demanding power systems. The use of CoolSiC Schottky Diode Gen 5 ensures minimal power losses and improved efficiency in high speed switching applications.
Enabling higher frequency
Outstanding module efficiency
System efficiency improvement
System cost advantages
Reduced cooling requirements
Longer life time and/or higher power density
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