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Infineon FS13MR12W2M1H_C55 Type N-Channel MOSFET, 62.5 A, 1200 V Enhancement EasyPACK FS13MR12W2M1HC55BPSA1

RS 제품 번호:: 348-979
제조사 부품 번호:: FS13MR12W2M1HC55BPSA1
제조업체:: Infineon

Infineon FS13MR12W2M1H_C55 Type N-Channel MOSFET, 62.5 A, 1200 V Enhancement EasyPACK FS13MR12W2M1HC55BPSA1

Subtotal (1 unit)*

₩667,260.88

재고있음

추가로 2026년 1월 19일 부터 15 개 단위 배송

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* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 348-979
제조사 부품 번호:: FS13MR12W2M1HC55BPSA1
제조업체:: Infineon

참조 문서

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	62.5A
	Maximum Drain Source Voltage Vds	1200V
	Series	FS13MR12W2M1H_C55
	Package Type	EasyPACK
	Mount Type	Screw
	Maximum Drain Source Resistance Rds	21.7mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	5.35V
	Maximum Gate Source Voltage Vgs	23 V
	Maximum Power Dissipation Pd	20mW
	Minimum Operating Temperature	-40°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	IEC 60749, IEC 60747, IEC 60068
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 62.5A
	Maximum Drain Source Voltage Vds 1200V
	Series FS13MR12W2M1H_C55
	Package Type EasyPACK
	Mount Type Screw
	Maximum Drain Source Resistance Rds 21.7mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 5.35V
	Maximum Gate Source Voltage Vgs 23 V
	Maximum Power Dissipation Pd 20mW
	Minimum Operating Temperature -40°C
	Maximum Operating Temperature 150°C
	Standards/Approvals IEC 60749, IEC 60747, IEC 60068
	Automotive Standard No

Datasheet - FS13MR12W2M1HC55BPSA1

COO (Country of Origin):: DE

The Infineon EasyPACK 2B CoolSiC MOSFET 1200 V, 13 mΩ Six-Pack Module integrates CoolSiC MOSFET Enhanced Generation 1 technology for high performance power applications. Housed in a best-in-class package with a compact 12 mm height, it delivers optimal space efficiency without sacrificing performance. The module is built with leading-edge Wide Bandgap (WBG) materials, ensuring superior efficiency, thermal performance, and reliability.

Outstanding module efficiency

System cost advantages

System efficiency improvement

Reduced cooling requirements

Enabling higher frequency

Increase of power density

Better thermal conductivity of DCB material

Infineon FS13MR12W2M1H_C55 Type N-Channel MOSFET, 62.5 A, 1200 V Enhancement EasyPACK FS13MR12W2M1HC55BPSA1

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