Infineon FF11MR12W2M1HP_B11 Type N-Channel MOSFET, 75 A, 1200 V Enhancement EasyPACK FF11MR12W2M1HPB11BPSA1
- RS 제품 번호:
- 348-976
- 제조사 부품 번호:
- FF11MR12W2M1HPB11BPSA1
- 제조업체:
- Infineon
Subtotal (1 unit)*
₩327,708.44
재고있음
- 18 개 단위 배송 준비 완료
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수량 | 한팩당 |
|---|---|
| 1 + | ₩327,708.44 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 348-976
- 제조사 부품 번호:
- FF11MR12W2M1HPB11BPSA1
- 제조업체:
- Infineon
사양
참조 문서
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제품 세부 사항
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 75A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | EasyPACK | |
| Series | FF11MR12W2M1HP_B11 | |
| Mount Type | Screw | |
| Maximum Drain Source Resistance Rds | 23.1mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 5.35V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Power Dissipation Pd | 20mW | |
| Maximum Gate Source Voltage Vgs | 23 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC 60747, IEC 60068, IEC 60749 | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 75A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type EasyPACK | ||
Series FF11MR12W2M1HP_B11 | ||
Mount Type Screw | ||
Maximum Drain Source Resistance Rds 23.1mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 5.35V | ||
Minimum Operating Temperature -40°C | ||
Maximum Power Dissipation Pd 20mW | ||
Maximum Gate Source Voltage Vgs 23 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC 60747, IEC 60068, IEC 60749 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- DE
The Infineon EasyDUAL 2B CoolSiC MOSFET Half-Bridge Module is engineered for high performance power applications, offering a best-in-class package with a compact 12 mm height. It leverages leading-edge Wide Bandgap (WBG) material, providing enhanced power efficiency and thermal performance. The module is designed with very low stray inductance, which minimizes power losses and improves switching speed.
Outstanding module efficiency
System cost advantages
System efficiency improvement
Reduced cooling requirements
Enabling higher frequency
Increase of power density
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