Infineon FF1MR12MM1HB11BPSA1 MOSFET Gate Driver 2, 420 A 23 V, AG-ECONOD
- RS 제품 번호:
- 351-898
- 제조사 부품 번호:
- FF1MR12MM1HB11BPSA1
- 제조업체:
- Infineon
Subtotal (1 unit)*
₩1,612,915.92
재고있음
- 10 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 |
|---|---|
| 1 + | ₩1,612,915.92 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 351-898
- 제조사 부품 번호:
- FF1MR12MM1HB11BPSA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | Gate Driver Module | |
| Output Current | 420A | |
| Package Type | AG-ECONOD | |
| Fall Time | 77ns | |
| Driver Type | MOSFET | |
| Rise Time | 261ns | |
| Minimum Supply Voltage | 10V | |
| Number of Drivers | 2 | |
| Maximum Supply Voltage | 23V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC 60749, IEC 60747, IEC 60068 | |
| Series | FF1MR12MM1H_B11 | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type Gate Driver Module | ||
Output Current 420A | ||
Package Type AG-ECONOD | ||
Fall Time 77ns | ||
Driver Type MOSFET | ||
Rise Time 261ns | ||
Minimum Supply Voltage 10V | ||
Number of Drivers 2 | ||
Maximum Supply Voltage 23V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC 60749, IEC 60747, IEC 60068 | ||
Series FF1MR12MM1H_B11 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- HU
The Infineon EconoDUAL 3 CoolSiC MOSFET half bridge module 1200 V, 1.4 mΩ with enhanced generation 1, NTC and Press FIT contact technology. Also available with pre-applied Thermal Interface Material or with wave structure on the backside of the base plate for direct liquid cooling.
Low switching losses
Superior gate oxide reliability
Higher gate threshold voltage
Higher power output
Robust integrated body diode
High cosmic ray robustness
High speed switching module
Screw power terminals
Integrated NTC temperature sensor
Isolated baseplate
관련된 링크들
- Infineon FF6MR Type N-Channel MOSFET, 150 A, 1200 V Enhancement AG-EASY2B FF6MR20W2M1HB70BPSA1
- Infineon FF600R07ME4BPSA1 IGBT AG-ECONOD-411
- Infineon FF600R07ME4B11BPSA1 IGBT 650 V AG-ECONOD-411
- Infineon Type N-Channel MOSFET, 400 A, 1200 V Enhancement, 8-Pin AG-EASY3B FF2MR12W3M1HB11BPSA1
- Infineon EasyDUAL Dual SiC N-Channel MOSFET, 50 A, 1200 V, 23-Pin AG-EASY1B FF17MR12W1M1HB70BPSA1
- Infineon EasyDUAL Dual SiC N-Channel MOSFET, 25 A, 1200 V, 23-Pin AG-EASY1B FF33MR12W1M1HB11BPSA1
- Infineon EasyDUAL Type N-Channel MOSFET, 50 A, 1200 V Enhancement, 23-Pin AG-EASY1B FF17MR12W1M1HB11BPSA1
- Infineon FF600R12ME7BPSA1, P-Channel Dual IGBT, 600 A 1200 V AG-ECONOD, Through Hole
