Infineon CoolSiC Type N-Channel MOSFET, 23 A, 750 V Enhancement, 4-Pin PG-TO247-4 AIMZA75R090M1HXKSA1
- RS 제품 번호:
- 348-946
- 제조사 부품 번호:
- AIMZA75R090M1HXKSA1
- 제조업체:
- Infineon
대량 구매 할인 기용 가능
Subtotal (1 unit)*
₩14,133.84
일시적 품절
- 2026년 7월 06일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 |
|---|---|
| 1 - 9 | ₩14,133.84 |
| 10 - 99 | ₩12,718.20 |
| 100 - 499 | ₩11,740.60 |
| 500 - 999 | ₩10,887.08 |
| 1000 + | ₩9,762.84 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 348-946
- 제조사 부품 번호:
- AIMZA75R090M1HXKSA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 23A | |
| Maximum Drain Source Voltage Vds | 750V | |
| Series | CoolSiC | |
| Package Type | PG-TO247-4 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 117mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 113W | |
| Typical Gate Charge Qg @ Vgs | 15nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 23 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 23A | ||
Maximum Drain Source Voltage Vds 750V | ||
Series CoolSiC | ||
Package Type PG-TO247-4 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 117mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 113W | ||
Typical Gate Charge Qg @ Vgs 15nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 23 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- MY
The Infineon 750 V CoolSiC MOSFET is built over the solid silicon carbide technology developed in Infineon in more than 20 years. Leveraging the wide bandgapSiC material characteristics, the 750V CoolSiC MOSFET offers a unique combination of performance, reliability and ease of use. Suitable for high temperature and harsh operations, it enables the simplified and cost effective deployment of the highest system efficiency.
Infineon proprietary die attach technology
Driver source pin available
Enhanced robustness and reliability for bus voltages beyond 500 V
Superior efficiency in hard switching
Higher switching frequency in soft switching topologies
Robustness against parasitic turn on for unipolar gate driving
Reduced switching losses through improved gate control
관련된 링크들
- Infineon CoolSiC Type N-Channel MOSFET, 89 A, 750 V Enhancement, 4-Pin PG-TO247-4 AIMZA75R016M1HXKSA1
- Infineon CoolSiC Type N-Channel MOSFET, 60 A, 750 V Enhancement, 4-Pin PG-TO247-4 AIMZA75R027M1HXKSA1
- Infineon CoolSiC Type N-Channel MOSFET, 75 A, 750 V Enhancement, 4-Pin PG-TO247-4 AIMZA75R020M1HXKSA1
- Infineon CoolSiC Type N-Channel MOSFET, 44 A, 750 V Enhancement, 4-Pin PG-TO247-4 AIMZA75R040M1HXKSA1
- Infineon CoolSiC Type N-Channel MOSFET, 32 A, 750 V Enhancement, 4-Pin PG-TO247-4 AIMZA75R060M1HXKSA1
- Infineon CoolSiC Type N-Channel MOSFET, 16 A, 750 V Enhancement, 4-Pin PG-TO247-4 AIMZA75R140M1HXKSA1
- Infineon CoolSiC Type N-Channel MOSFET, 23 A, 750 V Enhancement, 4-Pin PG-TO247-4 IMZA75R090M1HXKSA1
- Infineon AIMZA75 Type N-Channel MOSFET, 163 A, 750 V Enhancement, 4-Pin PG-TO247-4 AIMZA75R008M1HXKSA1