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Infineon CoolSiC Type N-Channel MOSFET, 89 A, 750 V Enhancement, 4-Pin PG-TO247-4 AIMZA75R016M1HXKSA1

RS 제품 번호:: 348-938
제조사 부품 번호:: AIMZA75R016M1HXKSA1
제조업체:: Infineon

Infineon CoolSiC Type N-Channel MOSFET, 89 A, 750 V Enhancement, 4-Pin PG-TO247-4 AIMZA75R016M1HXKSA1

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Subtotal (1 unit)*

₩50,291.88

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추가로 2025년 12월 29일 부터 240 개 단위 배송

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* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 348-938
제조사 부품 번호:: AIMZA75R016M1HXKSA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	89A
	Maximum Drain Source Voltage Vds	750V
	Package Type	PG-TO247-4
	Series	CoolSiC
	Mount Type	Through Hole
	Pin Count	4
	Maximum Drain Source Resistance Rds	22mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	81nC
	Maximum Power Dissipation Pd	319W
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	23 V
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 89A
	Maximum Drain Source Voltage Vds 750V
	Package Type PG-TO247-4
	Series CoolSiC
	Mount Type Through Hole
	Pin Count 4
	Maximum Drain Source Resistance Rds 22mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 81nC
	Maximum Power Dissipation Pd 319W
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 23 V
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard AEC-Q101

Datasheet - AIMZA75R016M1HXKSA1

The Infineon 750 V CoolSiC MOSFET is built over the solid silicon carbide technology developed in Infineon in more than 20 years. Leveraging the wide bandgapSiC material characteristics, the 750V CoolSiC MOSFET offers a unique combination of performance, reliability and ease of use. Suitable for high temperature and harsh operations, it enables the simplified and cost effective deployment of the highest system efficiency.

Infineon proprietary die attach technology

Driver source pin available

Enhanced robustness and reliability for bus voltages beyond 500 V

Superior efficiency in hard switching

Higher switching frequency in soft switching topologies

Robustness against parasitic turn on for unipolar gate driving

Reduced switching losses through improved gate control

Infineon CoolSiC Type N-Channel MOSFET, 89 A, 750 V Enhancement, 4-Pin PG-TO247-4 AIMZA75R016M1HXKSA1

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