Infineon AIMZA75 Type N-Channel MOSFET, 163 A, 750 V Enhancement, 4-Pin PG-TO247-4 AIMZA75R008M1HXKSA1
- RS 제품 번호:
- 351-988
- 제조사 부품 번호:
- AIMZA75R008M1HXKSA1
- 제조업체:
- Infineon
대량 구매 할인 기용 가능
Subtotal (1 unit)*
₩102,414.00
현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.
수량 | 한팩당 |
|---|---|
| 1 - 9 | ₩102,414.00 |
| 10 - 99 | ₩92,176.50 |
| 100 + | ₩85,020.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 351-988
- 제조사 부품 번호:
- AIMZA75R008M1HXKSA1
- 제조업체:
- Infineon
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 163A | |
| Maximum Drain Source Voltage Vds | 750V | |
| Package Type | PG-TO247-4 | |
| Series | AIMZA75 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 14.0mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 517W | |
| Forward Voltage Vf | 5.3V | |
| Typical Gate Charge Qg @ Vgs | 178nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 5.1mm | |
| Length | 21.1mm | |
| Standards/Approvals | AEC Q101 | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 163A | ||
Maximum Drain Source Voltage Vds 750V | ||
Package Type PG-TO247-4 | ||
Series AIMZA75 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 14.0mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 517W | ||
Forward Voltage Vf 5.3V | ||
Typical Gate Charge Qg @ Vgs 178nC | ||
Maximum Operating Temperature 175°C | ||
Height 5.1mm | ||
Length 21.1mm | ||
Standards/Approvals AEC Q101 | ||
Automotive Standard AEC-Q101 | ||
The Infineon CoolSiC Automotive MOSFET is built over the solid silicon carbide technology. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling the simplified and cost effective system design for top efficiency and power density.
Superior efficiency in hard switching
Enables higher switching frequency
Higher reliability
Robustness against parasitic turn
Unipolar driving
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