Infineon AIMZA75 Type N-Channel MOSFET, 163 A, 750 V Enhancement, 4-Pin PG-TO247-4 AIMZA75R008M1HXKSA1
- RS 제품 번호:
- 351-988
- 제조사 부품 번호:
- AIMZA75R008M1HXKSA1
- 제조업체:
- Infineon
대량 구매 할인 기용 가능
Subtotal (1 unit)*
₩98,730.08
일시적 품절
- 2026년 6월 15일 부터 배송
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수량 | 한팩당 |
|---|---|
| 1 - 9 | ₩98,730.08 |
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| 100 + | ₩81,952.96 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 351-988
- 제조사 부품 번호:
- AIMZA75R008M1HXKSA1
- 제조업체:
- Infineon
사양
참조 문서
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제품 세부 사항
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 163A | |
| Maximum Drain Source Voltage Vds | 750V | |
| Series | AIMZA75 | |
| Package Type | PG-TO247-4 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 14.0mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 517W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 23 V | |
| Typical Gate Charge Qg @ Vgs | 178nC | |
| Forward Voltage Vf | 5.3V | |
| Maximum Operating Temperature | 175°C | |
| Length | 21.1mm | |
| Standards/Approvals | AEC Q101 | |
| Width | 15.9 mm | |
| Height | 5.1mm | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 163A | ||
Maximum Drain Source Voltage Vds 750V | ||
Series AIMZA75 | ||
Package Type PG-TO247-4 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 14.0mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 517W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 23 V | ||
Typical Gate Charge Qg @ Vgs 178nC | ||
Forward Voltage Vf 5.3V | ||
Maximum Operating Temperature 175°C | ||
Length 21.1mm | ||
Standards/Approvals AEC Q101 | ||
Width 15.9 mm | ||
Height 5.1mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- AT
The Infineon CoolSiC Automotive MOSFET is built over the solid silicon carbide technology. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling the simplified and cost effective system design for top efficiency and power density.
Superior efficiency in hard switching
Enables higher switching frequency
Higher reliability
Robustness against parasitic turn
Unipolar driving
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