Infineon CoolSiC Type N-Channel MOSFET, 23 A, 750 V Enhancement, 4-Pin PG-TO247-4 IMZA75R090M1HXKSA1

모든 MOSFETs 열람하기
대량 구매 할인 기용 가능

Subtotal (1 unit)*

₩13,551.04

Add to Basket
수량 선택 또는 입력
재고있음
  • 추가로 2025년 12월 29일 부터 240 개 단위 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량
한팩당
1 - 9₩13,551.04
10 - 99₩12,197.44
100 - 499₩11,240.52
500 - 999₩10,428.36
1000 +₩9,347.36

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:
349-345
제조사 부품 번호:
IMZA75R090M1HXKSA1
제조업체:
Infineon
제품 정보를 선택해 유사 제품을 찾기
모두 선택

브랜드

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

23A

Maximum Drain Source Voltage Vds

750V

Series

CoolSiC

Package Type

PG-TO247-4

Mount Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance Rds

117mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

15nC

Maximum Power Dissipation Pd

113W

Maximum Gate Source Voltage Vgs

23 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
CN
The Infineon 750 V CoolSiC Power Device G1 is built on Infineon’s solid silicon carbide technology, developed over more than 20 years. By leveraging the unique characteristics of wide bandgap SiC materials, the 750 V CoolSiC MOSFET delivers a unique combination of performance, reliability, and ease of use. It is specifically designed for high temperature and harsh operating conditions, enabling the simplified and cost effective deployment of systems with the highest efficiency. This MOSFET is perfect for applications requiring robust performance and energy efficient solutions.

Enhanced robustness and reliability for bus voltages beyond 500 V

Superior efficiency in hard switching

Higher switching frequency in soft switching topologies

Robustness against parasitic turn on for unipolar gate driving

Reduced switching losses through improved gate control

관련된 링크들