Infineon OptiMOS 5 Type N, Type N-Channel MOSFET, 447 A, 60 V Enhancement, 9-Pin PG-WHTFN-9 IQDH88N06LM5CGSCATMA1
- RS 제품 번호:
- 348-881
- 제조사 부품 번호:
- IQDH88N06LM5CGSCATMA1
- 제조업체:
- Infineon
대량 구매 할인 기용 가능
Subtotal (1 pack of 2 units)*
₩17,834.70
현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 2 - 18 | ₩8,917.35 | ₩17,834.70 |
| 20 - 198 | ₩8,032.05 | ₩16,064.10 |
| 200 - 998 | ₩7,406.10 | ₩14,812.20 |
| 1000 - 1998 | ₩6,865.95 | ₩13,731.90 |
| 2000 + | ₩6,154.20 | ₩12,306.45 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 348-881
- 제조사 부품 번호:
- IQDH88N06LM5CGSCATMA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | Type N, Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 447A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | OptiMOS 5 | |
| Package Type | PG-WHTFN-9 | |
| Mount Type | Surface, Surface Mount | |
| Pin Count | 9 | |
| Maximum Drain Source Resistance Rds | 0.86mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 333W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type Type N, Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 447A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series OptiMOS 5 | ||
Package Type PG-WHTFN-9 | ||
Mount Type Surface, Surface Mount | ||
Pin Count 9 | ||
Maximum Drain Source Resistance Rds 0.86mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 333W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon MOSFET comes with a low RDS(on) of 0.86 mOhm combined with outstanding thermal performance for easy power loss management. The Centre-Gate footprint is optimized for parallelization.
Reduced voltage overshoot
Increased maximum current capability
Fast switching
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