Infineon OptiMOS 5 Type N, Type N-Channel MOSFET, 700 A, 30 V Enhancement, 9-Pin PG-WHTFN-9 IQDH35N03LM5CGSCATMA1

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RS 제품 번호:
348-875
제조사 부품 번호:
IQDH35N03LM5CGSCATMA1
제조업체:
Infineon
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브랜드

Infineon

Product Type

MOSFET

Channel Type

Type N, Type N

Maximum Continuous Drain Current Id

700A

Maximum Drain Source Voltage Vds

30V

Package Type

PG-WHTFN-9

Series

OptiMOS 5

Mount Type

Surface, Surface Mount

Pin Count

9

Maximum Drain Source Resistance Rds

0.35mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±20 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

278W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
MY
The Infineon MOSFET comes with a low RDS(on) of 0.35 mOhm combined with outstanding thermal performance for easy power loss management. The Centre-Gate footprint is optimized for parallelization.

Minimized conduction losses

Fast switching

Reduced voltage overshoot

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