Infineon OptiMOS Type N-Channel MOSFET, 132 A, 60 V Enhancement, 9-Pin PG-WHTFN-9 IQE030N06NM5CGSCATMA1
- RS 제품 번호:
- 284-758
- 제조사 부품 번호:
- IQE030N06NM5CGSCATMA1
- 제조업체:
- Infineon
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 pack of 5 units)*
₩21,319.20
현재 액세스할 수 없는 재고 정보
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 5 - 45 | ₩4,263.84 | ₩21,319.20 |
| 50 - 95 | ₩4,049.52 | ₩20,247.60 |
| 100 - 495 | ₩3,752.48 | ₩18,762.40 |
| 500 - 995 | ₩3,451.68 | ₩17,258.40 |
| 1000 + | ₩3,323.84 | ₩16,619.20 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 284-758
- 제조사 부품 번호:
- IQE030N06NM5CGSCATMA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 132A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | OptiMOS | |
| Package Type | PG-WHTFN-9 | |
| Mount Type | Surface | |
| Pin Count | 9 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 39nC | |
| Maximum Power Dissipation Pd | 100W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC61249-2-21, RoHS, JEDEC | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 132A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series OptiMOS | ||
Package Type PG-WHTFN-9 | ||
Mount Type Surface | ||
Pin Count 9 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 39nC | ||
Maximum Power Dissipation Pd 100W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC61249-2-21, RoHS, JEDEC | ||
Automotive Standard No | ||
The Infineon MOSFET is a power transistor exemplifies cutting edge technology and performance, designed for efficient operation in demanding applications. Optimised for synchronous rectification, it assures superior thermal management and reliability, making it an Ideal choice for various industrial uses. Built around the OptiMOS 5 platform, it is tailored to operate effectively within a 60V range while maintaining a Compact footprint. Its robust design facilitates efficient switching, ensuring high performance while minimising losses.
Superior thermal resistance for reliability
Pb free plating for environmental compliance
100% avalanche testing for performance assurance
Exceptional gate charge for switching efficiency
Complies with halogen free standards
Ideal for rigorous industrial applications
관련된 링크들
- Infineon OptiMOS Type N-Channel MOSFET, 132 A, 60 V Enhancement, 9-Pin PG-WHTFN-9 IQE030N06NM5CGSCATMA1
- Infineon OptiMOS SiC N-Channel MOSFET, 85 A, 100 V, 9-Pin PG-WHTFN-9 IQE065N10NM5CGSCATMA1
- Infineon OptiMOS Type N-Channel MOSFET, 99 A, 80 V Enhancement, 9-Pin PG-WHTFN-9 IQE046N08LM5CGSCATMA1
- Infineon OptiMOS Type N-Channel MOSFET, 99 A, 80 V Enhancement, 9-Pin PG-WHTFN-9 IQE050N08NM5CGSCATMA1
- Infineon IQE Type N-Channel MOSFET, 205 A, 40 V Enhancement, 9-Pin WHTFN IQE013N04LM6CGSCATMA1
- Infineon IQE Type N-Channel MOSFET, 205 A, 40 V Enhancement, 9-Pin WHTFN
- Infineon OptiMOS 6 N-Channel MOSFET, 597 A, 40 V, 9-Pin PG-WHTFN-9 IQD005N04NM6CGSCATMA1
- Infineon OptiMOS 5 N-Channel MOSFET, 700 A, 30 V, 9-Pin PG-WHTFN-9 IQDH35N03LM5CGSCATMA1