Infineon OptiMOS Type N-Channel MOSFET, 447 A, 60 V Enhancement, 9-Pin PG-TTFN-9 IQDH88N06LM5CGATMA1

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  • 2026년 3월 30일 부터 배송
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RS 제품 번호:
284-944
제조사 부품 번호:
IQDH88N06LM5CGATMA1
제조업체:
Infineon
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브랜드

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

447A

Maximum Drain Source Voltage Vds

60V

Package Type

PG-TTFN-9

Series

OptiMOS

Mount Type

Surface

Pin Count

9

Maximum Drain Source Resistance Rds

0.86mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

333W

Forward Voltage Vf

1V

Typical Gate Charge Qg @ Vgs

76nC

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS, IEC61249-2-21

Automotive Standard

No

The Infineon MOSFET features an OptiMOS 5 Power Transistor is a high performance N channel MOSFET designed to provide exceptional efficiency and reliability for industrial applications. Utilising Advanced semiconductor technology, this component delivers superior thermal management and low on resistance, making it Ideal for power conversion solutions. With its high avalanche energy rating and rigorous validation against JEDEC standards, you can Trust this product to meet stringent operational demands while maintaining safety and durability.

Optimised thermal resistance for cooling

Qualified for industrial reliability

Pb free lead plating for eco friendliness

Low gate drive requirements simplify circuits

Robust design for high drain currents

100% avalanche tested for reliability

Compact package for easy integration

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