Infineon OptiMOS Type N-Channel MOSFET, 99 A, 80 V Enhancement, 9-Pin PG-WHTFN-9 IQE046N08LM5CGSCATMA1
- RS 제품 번호:
- 284-764
- 제조사 부품 번호:
- IQE046N08LM5CGSCATMA1
- 제조업체:
- Infineon
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Subtotal (1 reel of 6000 units)*
₩17,619,360.00
일시적 품절
- 2026년 3월 30일 부터 배송
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수량 | 한팩당 | 릴당* |
|---|---|---|
| 6000 + | ₩2,936.56 | ₩17,622,744.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 284-764
- 제조사 부품 번호:
- IQE046N08LM5CGSCATMA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 99A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | PG-WHTFN-9 | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 9 | |
| Maximum Drain Source Resistance Rds | 4.6mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 100W | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 19nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JEDEC, IEC61249-2-21, RoHS | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 99A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type PG-WHTFN-9 | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 9 | ||
Maximum Drain Source Resistance Rds 4.6mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 100W | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 19nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JEDEC, IEC61249-2-21, RoHS | ||
Automotive Standard No | ||
The Infineon MOSFET features an OptiMOS 5 Power Transistor delivers high efficiency and reliability tailored for demanding applications. With a focus on optimised performance in switch mode power supplies, this N channel MOSFET excels in synchronous rectification tasks. Engineered with Advanced thermal characteristics, it ensures superior heat dissipation alongside ultra low on resistance, enabling effective operation even under strict electrical demands. The component stands out for its extensive validation under JEDEC standards for industrial applications, ensuring peace of mind for professional users. Ideal for industrial power circuits, the transistor incorporates a robust avalanche rating, ensuring resilience during high stress scenarios, making it a smart choice for tomorrow's power management systems.
Optimised for high performance SMPS
Logic level control for low voltage systems
100% avalanche tested for reliability
Halogen free design for environmental responsibility
Pb free lead plating for modern standards
RoHS compliant for safe usage
Superior thermal resistance for durability
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