Infineon OptiMOS SiC N-Channel MOSFET, 85 A, 100 V, 9-Pin PG-WHTFN-9 IQE065N10NM5CGSCATMA1
- RS 제품 번호:
- 284-777
- 제조사 부품 번호:
- IQE065N10NM5CGSCATMA1
- 제조업체:
- Infineon
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RS는 더 이상 이 제품을 입고하지 않습니다.
- RS 제품 번호:
- 284-777
- 제조사 부품 번호:
- IQE065N10NM5CGSCATMA1
- 제조업체:
- Infineon
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참조 문서
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제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 85 A | |
| Maximum Drain Source Voltage | 100 V | |
| Series | OptiMOS | |
| Package Type | PG-WHTFN-9 | |
| Mounting Type | Surface Mount | |
| Pin Count | 9 | |
| Channel Mode | Enhancement | |
| Number of Elements per Chip | 1 | |
| Transistor Material | SiC | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 85 A | ||
Maximum Drain Source Voltage 100 V | ||
Series OptiMOS | ||
Package Type PG-WHTFN-9 | ||
Mounting Type Surface Mount | ||
Pin Count 9 | ||
Channel Mode Enhancement | ||
Number of Elements per Chip 1 | ||
Transistor Material SiC | ||
The Infineon MOSFET features an OptiMOS 5 Power Transistor is engineered for exceptional performance in synchronous rectification applications, delivering high efficiency and reliability. The advanced MOSFET technology makes it an ideal choice for demanding power supply designs, ensuring optimal thermal management and reduced energy loss. Designed to operate at 100V, this transistor exhibits impressive robustness through 100% avalanche testing, offering peace of mind for industrial applications.
Optimised for switch mode power supplies
N channel for enhanced switching
Superior thermal resistance ensures reliability
Pb free lead plating for environmental safety
Halogen free materials meet IEC standards
N channel for enhanced switching
Superior thermal resistance ensures reliability
Pb free lead plating for environmental safety
Halogen free materials meet IEC standards
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