Infineon IQE N-Channel MOSFET, 205 A, 40 V Enhancement, 9-Pin WHTFN IQE013N04LM6CGSCATMA1

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Subtotal (1 reel of 6000 units)*

₩13,644,000.00

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  • 2027년 10월 27일 부터 배송
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6000 - 6000₩2,274.00₩13,639,200.00
12000 - 12000₩2,228.00₩13,366,800.00
18000 +₩2,184.00₩13,099,200.00

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RS 제품 번호:
260-1076
제조사 부품 번호:
IQE013N04LM6CGSCATMA1
제조업체:
Infineon
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모두 선택

브랜드

Infineon

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

205A

Maximum Drain Source Voltage Vds

40V

Series

IQE

Package Type

WHTFN

Mount Type

Surface

Pin Count

9

Maximum Drain Source Resistance Rds

1.35mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1V

Maximum Operating Temperature

+175°C

Standards/Approvals

RoHS

Automotive Standard

No

Infineon IQE Series MOSFET, 40V Maximum Drain-Source Voltage, 205A Maximum Continuous Drain Current - IQE013N04LM6CGSCATMA1


This n-channel enhancement MOSFET is a surface-mount power device designed for high-current switching in Compact assemblies. It operates across a wide temperature range for harsh environments and provides a low on-state resistance for efficient power conversion. The device is supplied in a WHTFN package with multiple pins to support thermal and current handling in dense layouts.

Features and Benefits:


• 1.35mΩ Rds(on) reduces conduction losses and improves efficiency
• 205A continuous current supports heavy-load power switching
• 40V drain-source voltage enables mid-voltage system use
• 1V forward voltage lowers losses in diode conduction paths
• -55°C to +175°C operation extends use in extreme temperatures

Applications


• Suitable for DC-DC converters in power management systems
• Ideal for high-current motor-drive stages in Compact modules
• Used with power distribution arrays requiring low resistance
• Can be used for battery protection and high-current switching

What package type does it use and why is that relevant?


It is supplied in a WHTFN package which aids surface-mount assembly and supports thermal dissipation through multiple pins.

How does the channel configuration affect switching?


The device uses an n-channel enhancement mode, enabling low-side switching with low gate-drive requirements for efficient control.

Is it intended for automotive standards compliance?


It is not specified as meeting automotive standards and should be evaluated for vehicle-grade use accordingly.

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