onsemi NTM Type N-Channel MOSFET, 310 A, 40 V Enhancement, 8-Pin DFN-8 NTMFSC0D8N04XMTWG
- RS 제품 번호:
- 277-046
- 제조사 부품 번호:
- NTMFSC0D8N04XMTWG
- 제조업체:
- onsemi
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대량 구매 할인 기용 가능
Subtotal (1 tape of 5 units)*
₩10,764.00
현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.
수량 | 한팩당 | Per Tape* |
|---|---|---|
| 5 - 45 | ₩2,152.80 | ₩10,764.00 |
| 50 - 95 | ₩2,043.60 | ₩10,218.00 |
| 100 - 495 | ₩1,895.40 | ₩9,477.00 |
| 500 - 995 | ₩1,743.30 | ₩8,716.50 |
| 1000 + | ₩1,677.00 | ₩8,385.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 277-046
- 제조사 부품 번호:
- NTMFSC0D8N04XMTWG
- 제조업체:
- onsemi
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 310A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | DFN-8 | |
| Series | NTM | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.78mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.8V | |
| Typical Gate Charge Qg @ Vgs | 72nC | |
| Maximum Power Dissipation Pd | 135W | |
| Maximum Operating Temperature | 175°C | |
| Length | 5.1mm | |
| Standards/Approvals | Pb-Free, RoHS | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 310A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type DFN-8 | ||
Series NTM | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.78mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.8V | ||
Typical Gate Charge Qg @ Vgs 72nC | ||
Maximum Power Dissipation Pd 135W | ||
Maximum Operating Temperature 175°C | ||
Length 5.1mm | ||
Standards/Approvals Pb-Free, RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- PH
The ON Semiconductor Power MOSFET Technology with best-in-class On-Resistance for motor driver application. Lower On-Resistance and less gate charge can reduce conduction loss and driving loss. Good softness control for body diode reverse recovery can reduce voltage spike stress without extra snubber circuit in application.
Ultra low gate charge
High speed switching with low capacitance
Soft body diode reverse recovery
Extreme lower on resistance to minimize conduction losses
Device is Pb Free and RoHS compliant
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