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onsemi NTM N-Channel MOSFET, 310 A, 40 V Enhancement, 8-Pin DFN-8 NTMFSC0D8N04XMTWG

RS 제품 번호:: 277-046
제조사 부품 번호:: NTMFSC0D8N04XMTWG
제조업체:: onsemi

onsemi NTM N-Channel MOSFET, 310 A, 40 V Enhancement, 8-Pin DFN-8 NTMFSC0D8N04XMTWG

대량 구매 할인 기용 가능

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Subtotal (1 tape of 5 units)*

₩12,980.00

일시적 품절

2027년 9월 27일 부터 배송

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수량	한팩당	Per Tape*
5 - 45	₩2,596.00	₩12,980.00
50 - 95	₩2,468.00	₩12,340.00
100 - 495	₩2,284.00	₩11,420.00
500 - 995	₩2,104.00	₩10,520.00
1000 +	₩2,020.00	₩10,100.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 277-046
제조사 부품 번호:: NTMFSC0D8N04XMTWG
제조업체:: onsemi

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모두 선택	제품 정보	값
	브랜드	onsemi
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	310A
	Maximum Drain Source Voltage Vds	40V
	Package Type	DFN-8
	Series	NTM
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.78mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	72nC
	Maximum Power Dissipation Pd	135W
	Forward Voltage Vf	800mV
	Maximum Gate Source Voltage Vgs	20V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Length	5.1mm
	Width	6.15mm
	Standards/Approvals	Pb-Free, RoHS
	Automotive Standard	No

	모두 선택
	브랜드 onsemi
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 310A
	Maximum Drain Source Voltage Vds 40V
	Package Type DFN-8
	Series NTM
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.78mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 72nC
	Maximum Power Dissipation Pd 135W
	Forward Voltage Vf 800mV
	Maximum Gate Source Voltage Vgs 20V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Length 5.1mm
	Width 6.15mm
	Standards/Approvals Pb-Free, RoHS
	Automotive Standard No

Datasheet - NTMFSC0D8N04XMTWG

COO (Country of Origin):: PH

The ON Semiconductor Power MOSFET Technology with best-in-class On-Resistance for motor driver application. Lower On-Resistance and less gate charge can reduce conduction loss and driving loss. Good softness control for body diode reverse recovery can reduce voltage spike stress without extra snubber circuit in application.

Ultra low gate charge

High speed switching with low capacitance

Soft body diode reverse recovery

Extreme lower on resistance to minimize conduction losses

Device is Pb Free and RoHS compliant

onsemi NTM N-Channel MOSFET, 310 A, 40 V Enhancement, 8-Pin DFN-8 NTMFSC0D8N04XMTWG

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