onsemi NTM Type N-Channel MOSFET, 58 A, 1200 V Enhancement, 5-Pin DFN-5
- RS 제품 번호:
- 248-5821
- 제조사 부품 번호:
- NTMFS002N10MCLT1G
- 제조업체:
- onsemi
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대량 구매 할인 기용 가능
Subtotal (1 reel of 1500 units)*
₩3,942,360.00
재고있음
- 1,500 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 릴당* |
|---|---|---|
| 1500 - 1500 | ₩2,628.24 | ₩3,942,078.00 |
| 3000 - 3000 | ₩2,575.60 | ₩3,863,400.00 |
| 4500 + | ₩2,524.84 | ₩3,786,132.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 248-5821
- 제조사 부품 번호:
- NTMFS002N10MCLT1G
- 제조업체:
- onsemi
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 58A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | DFN-5 | |
| Series | NTM | |
| Mount Type | Through Hole | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 22mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Typical Gate Charge Qg @ Vgs | 45nC | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 117W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 58A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type DFN-5 | ||
Series NTM | ||
Mount Type Through Hole | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 22mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Typical Gate Charge Qg @ Vgs 45nC | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 117W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The ON Semiconductor MOSFET is a N channel MOSFET with 100 V drain to source voltage, RDS(ON) 2.8 mohm and continuous drain current 175 A also these devices are Pb−free, Halogen free/BFR free, Beryllium free and are RoHS compliant.
Small footprint (5x6 mm) for compact design
Low RDS(on) to minimize conduction losses
Low QG and capacitance to minimize driver losses
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