onsemi NTM Type N-Channel MOSFET, 58 A, 1200 V N, 5-Pin DFN-5
- RS 제품 번호:
- 244-9181
- 제조사 부품 번호:
- NTMFS3D2N10MDT1G
- 제조업체:
- onsemi
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대량 구매 할인 기용 가능
Subtotal (1 reel of 1500 units)*
₩3,815,460.00
일시적 품절
- 2026년 8월 24일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 릴당* |
|---|---|---|
| 1500 - 1500 | ₩2,543.64 | ₩3,814,896.00 |
| 3000 - 3000 | ₩2,492.88 | ₩3,738,756.00 |
| 4500 + | ₩2,442.12 | ₩3,664,026.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 244-9181
- 제조사 부품 번호:
- NTMFS3D2N10MDT1G
- 제조업체:
- onsemi
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 58A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | NTM | |
| Package Type | DFN-5 | |
| Mount Type | Through Hole | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 22mΩ | |
| Channel Mode | N | |
| Maximum Power Dissipation Pd | 117W | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 48nC | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | Pb-Free, RoHS | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 58A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series NTM | ||
Package Type DFN-5 | ||
Mount Type Through Hole | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 22mΩ | ||
Channel Mode N | ||
Maximum Power Dissipation Pd 117W | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 48nC | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals Pb-Free, RoHS | ||
Automotive Standard No | ||
The ON Semiconductor MOSFET used as Primary Switch in Isolated DC−DC Converter, Synchronous Rectification (SR) in DC−DC and AC−DC, AC−DC Adapters (USB PD) SR, Load Switch, Hotswap, O-ring Switch, BLDC Motor and Solar Inverter. Drain−to−Source Voltage and Gate−to−Source Voltage for this MOSFET is 100 V and ±20 V respectively.
Shielded Gate MOSFET Technology
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
Low QRR, Soft Recovery Body Diode
Low QOSS to Improve Light Load Efficiency
These Devices are Pb−Free, Halogen Free/BFR Free, Beryllium Free and are RoHS Compliant
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