onsemi NTMFS Type N-Channel MOSFET, 61 A, 80 V N, 8-Pin DFN NTMFSC010N08M7
- RS 제품 번호:
- 229-6475
- 제조사 부품 번호:
- NTMFSC010N08M7
- 제조업체:
- onsemi
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대량 구매 할인 기용 가능
Subtotal (1 pack of 5 units)*
₩12,182.40
마지막 RS 재고
- 최종적인 2,985 개 unit(s)이 배송 준비 됨
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 5 - 5 | ₩2,436.48 | ₩12,182.40 |
| 10 - 95 | ₩2,361.28 | ₩11,806.40 |
| 100 - 245 | ₩2,289.84 | ₩11,449.20 |
| 250 - 495 | ₩2,240.96 | ₩11,204.80 |
| 500 + | ₩2,192.08 | ₩10,960.40 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 229-6475
- 제조사 부품 번호:
- NTMFSC010N08M7
- 제조업체:
- onsemi
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 61A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | DFN | |
| Series | NTMFS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 10mΩ | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 78.1W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 38nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 5.1mm | |
| Length | 6.25mm | |
| Width | 0.95 mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 61A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type DFN | ||
Series NTMFS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 10mΩ | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 78.1W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 38nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 5.1mm | ||
Length 6.25mm | ||
Width 0.95 mm | ||
Automotive Standard No | ||
The ON Semiconductor N-Channel MOSFET is produced using an advanced power trench process. advancements in both silicon and dual cool package technologies have been combined to offer the lowest on state resistance while maintaining excellent switching performance by extremely low junction to ambient thermal resistance.
Improved package thermal capability
Reduces conduction loss
Improved system efficiency
Package material comply with latest requirements
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