STMicroelectronics SCT060HU Type N-Channel MOSFET, 30 A, 750 V Enhancement, 7-Pin HU3PAK SCT060HU75G3AG
- RS 제품 번호:
- 152-109
- 제조사 부품 번호:
- SCT060HU75G3AG
- 제조업체:
- STMicroelectronics
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Subtotal (1 reel of 600 units)*
₩10,789,320.00
재고있음
- 3,000 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 릴당* |
|---|---|---|
| 600 + | ₩17,982.20 | ₩10,789,771.20 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 152-109
- 제조사 부품 번호:
- SCT060HU75G3AG
- 제조업체:
- STMicroelectronics
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 750V | |
| Package Type | HU3PAK | |
| Series | SCT060HU | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 58mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 3V | |
| Typical Gate Charge Qg @ Vgs | 29nC | |
| Maximum Gate Source Voltage Vgs | ±18 V | |
| Maximum Operating Temperature | 175°C | |
| Height | 3.6mm | |
| Length | 14.1mm | |
| Standards/Approvals | RoHS | |
| Width | 19 mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 750V | ||
Package Type HU3PAK | ||
Series SCT060HU | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 58mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 3V | ||
Typical Gate Charge Qg @ Vgs 29nC | ||
Maximum Gate Source Voltage Vgs ±18 V | ||
Maximum Operating Temperature 175°C | ||
Height 3.6mm | ||
Length 14.1mm | ||
Standards/Approvals RoHS | ||
Width 19 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- JP
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using STs Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
AEC-Q101 qualified
High speed switching performances
Very fast and robust intrinsic body diode
Source sensing pin for increased efficiency
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