Name: Infineon FF75R12RT4HOSA1, Type N-Channel IGBT Module, 75 A 1200 V, 7-Pin 34 mm Module, Clamp
Brand: Infineon
SKU: 906-3075
Price: 148106.40 KRW
Availability: Discontinued

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모두 선택	제품 정보	값
	브랜드	Infineon
	Maximum Continuous Collector Current Ic	75A
	Product Type	IGBT Module
	Maximum Collector Emitter Voltage Vceo	1200V
	Maximum Power Dissipation Pd	395W
	Package Type	34 mm Module
	Mount Type	Clamp
	Channel Type	Type N
	Pin Count	7
	Maximum Gate Emitter Voltage VGEO	±20 V
	Maximum Collector Emitter Saturation Voltage VceSAT	2.25V
	Minimum Operating Temperature	-40°C
	Maximum Operating Temperature	150°C
	Length	94mm
	Width	34 mm
	Height	30.2mm
	Standards/Approvals	RoHS
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Maximum Continuous Collector Current Ic 75A
	Product Type IGBT Module
	Maximum Collector Emitter Voltage Vceo 1200V
	Maximum Power Dissipation Pd 395W
	Package Type 34 mm Module
	Mount Type Clamp
	Channel Type Type N
	Pin Count 7
	Maximum Gate Emitter Voltage VGEO ±20 V
	Maximum Collector Emitter Saturation Voltage VceSAT 2.25V
	Minimum Operating Temperature -40°C
	Maximum Operating Temperature 150°C
	Length 94mm
	Width 34 mm
	Height 30.2mm
	Standards/Approvals RoHS
	Automotive Standard No

IGBT Modules, Infineon

The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.

The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBT’s can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP ^TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.

Package styles include: 62mm Modules, EasyPACK, EconoPACK^TM2/EconoPACK^TM3/EconoPACK^TM4

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Infineon FF75R12RT4HOSA1, Type N-Channel IGBT Module, 75 A 1200 V, 7-Pin 34 mm Module, Clamp

IGBT Modules, Infineon

IGBT Discretes & Modules, Infineon

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