Infineon FF150R12RT4HOSA1, Type N-Channel IGBT Module, 150 A 1200 V AG-34MM-1, Clamp

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RS 제품 번호:
111-6082
Distrelec 제품 번호:
302-83-939
제조사 부품 번호:
FF150R12RT4HOSA1
제조업체:
Infineon
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브랜드

Infineon

Product Type

IGBT Module

Maximum Continuous Collector Current Ic

150A

Maximum Collector Emitter Voltage Vceo

1200V

Maximum Power Dissipation Pd

79W

Package Type

AG-34MM-1

Mount Type

Clamp

Channel Type

Type N

Maximum Collector Emitter Saturation Voltage VceSAT

2.15V

Minimum Operating Temperature

-40°C

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Operating Temperature

150°C

Width

34 mm

Height

30.2mm

Length

94mm

Standards/Approvals

RoHS

Automotive Standard

No

Infineon IGBT Module, 150A Maximum Continuous Collector Current, 1200V Maximum Collector Emitter Voltage - FF150R12RT4HOSA1


This IGBT module is designed for high-frequency switching applications, effectively combining two transistors in series configuration. It operates efficiently within a temperature range of -40°C to +150°C. With a Compact package size of 94 x 34 x 30.2 mm, this module is Ideal for integration into various industrial systems.

Features & Benefits


• Maximum continuous collector current rated at 150A ensures reliable performance

• Collector-emitter voltage supports up to 1200V for robust use

• Low switching losses enhance overall energy efficiency

• Isolated base plate improves thermal management and reliability

• AG-34MM-1 package type simplifies installation in panel-mounted configurations

Applications


• Suitable for motor drives in automation systems

• Utilised in uninterruptible power supplies for enhanced reliability

• Effective in high-frequency switching across industries

• Useful in power electronic converters for seamless operations

• Works well in conjunction with industrial automation frameworks

What are the thermal characteristics of this IGBT module?


The module features a thermal resistance from junction to case of 0.19 K/W, which is essential for maintaining operational efficiency. It also supports extensive power cycling with a specified 300,000 cycles at a junction temperature of 125°C and a temperature differential of 50K.

How does this IGBT module perform under high temperatures?


It operates effectively at a maximum junction temperature of 150°C, ensuring durability in demanding applications while maintaining a low VCEsat, which is further enhanced by a positive temperature coefficient for stable performance.

What makes the gate drive characteristics advantageous?


This IGBT module features a gate charge of 1.25μC, allowing for swift switching times, facilitating high-frequency operations essential in modern industrial applications. It also supports gate-emitter voltages of ±20V for flexible drive conditioning.

Is this product suitable for power electronics in automotive applications?


Yes, its robust specifications and reliability make it a viable option for power electronics in automotive systems where high efficiency and reliability are paramount.

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