제조사부품번호

Infineon FF300R12KT4HOSA1 IGBT Module, 450 A 1200 V

RS 제품 번호:: 244-5825
제조사 부품 번호:: FF300R12KT4HOSA1
제조업체:: Infineon

Infineon FF300R12KT4HOSA1 IGBT Module, 450 A 1200 V

대량 구매 할인 기용 가능

View bulk pricing options

Subtotal (1 unit)*

₩253,020.00

일시적 품절

2027년 5월 05일 부터 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당
1 - 1	₩253,020.00
2 - 2	₩247,980.00
3 - 3	₩243,000.00
4 +	₩238,160.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 244-5825
제조사 부품 번호:: FF300R12KT4HOSA1
제조업체:: Infineon

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	IGBT Module
	Maximum Continuous Collector Current Ic	450A
	Maximum Collector Emitter Voltage Vceo	1200V
	Maximum Power Dissipation Pd	1600W
	Number of Transistors	2
	Maximum Collector Emitter Saturation Voltage VceSAT	2.15V
	Minimum Operating Temperature	-40°C
	Maximum Gate Emitter Voltage VGEO	20 V
	Maximum Operating Temperature	175°C
	Series	FF
	Width	61.4mm
	Standards/Approvals	No
	Length	106.4mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type IGBT Module
	Maximum Continuous Collector Current Ic 450A
	Maximum Collector Emitter Voltage Vceo 1200V
	Maximum Power Dissipation Pd 1600W
	Number of Transistors 2
	Maximum Collector Emitter Saturation Voltage VceSAT 2.15V
	Minimum Operating Temperature -40°C
	Maximum Gate Emitter Voltage VGEO 20 V
	Maximum Operating Temperature 175°C
	Series FF
	Width 61.4mm
	Standards/Approvals No
	Length 106.4mm
	Automotive Standard No

Datasheet - FF300R12KT4HOSA1

Infineon Series FF IGBT Module, 1200V Collector-Emitter Voltage, 450A Collector Current - FF300R12KT4HOSA1

This IGBT module is a power semiconductor device designed to switch and control high-voltage DC circuits in industrial power systems. It combines two transistors in a single package to handle high current loads and operates across a wide temperature range suitable for demanding thermal environments.

Features and Benefits:

• 1200V blocking capability for high-voltage switching applications
• 450A continuous collector current to support heavy current demands
• 1600W maximum power dissipation for sustained high-power operation
• 2.15V low Vce(sat) for reduced conduction losses
• 20V maximum gate-emitter rating to define safe drive limits
• Operates up to 175°C for elevated-temperature installations

Applications

• Suitable for high-voltage motor drive systems
• Ideal for industrial inverters requiring high current
• Can be used for renewable-energy converter stages
• Used with power supplies needing Compact dual transistors
• Applicable in traction or utility power-electronics environments

What transistor configuration does it provide?

It contains two matched transistors in a single module allowing synchronous or complementary switching arrangements.

What environmental extremes can it withstand?

It is rated to function down to -40°C and up to 175°C for operation across wide temperature ranges.

How does the gate-emitter limitation affect drive circuitry?

The 20V gate-emitter limit defines the maximum allowable gate-drive voltage and determines required gate-drive protection and level-shifting design.

What electrical stress limits should designers observe?

Designers must account for a 1200V collector-emitter blocking limit and a 1600W package dissipation ceiling when planning thermal management.