STMicroelectronics STGD5NB120SZT4 IGBT, 10 A 1200 V, 3-Pin DPAK (TO-252), Surface Mount
- RS 제품 번호:
- 877-2879
- 제조사 부품 번호:
- STGD5NB120SZT4
- 제조업체:
- STMicroelectronics
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대량 구매 할인 기용 가능
Subtotal (1 pack of 5 units)*
₩17,690.80
일시적 품절
- 2025년 12월 29일 부터 6,920 개 단위 배송
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수량 | 한팩당 | 한팩당* |
|---|---|---|
| 5 - 620 | ₩3,538.16 | ₩17,690.80 |
| 625 - 1245 | ₩3,451.68 | ₩17,258.40 |
| 1250 + | ₩3,395.28 | ₩16,976.40 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 877-2879
- 제조사 부품 번호:
- STGD5NB120SZT4
- 제조업체:
- STMicroelectronics
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Maximum Continuous Collector Current | 10 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 75 W | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Channel Type | N | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Dimensions | 6.6 x 6.2 x 2.4mm | |
| Maximum Operating Temperature | +150 °C | |
| Energy Rating | 12.68mJ | |
| Minimum Operating Temperature | -55 °C | |
| Gate Capacitance | 430pF | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Maximum Continuous Collector Current 10 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 75 W | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Dimensions 6.6 x 6.2 x 2.4mm | ||
Maximum Operating Temperature +150 °C | ||
Energy Rating 12.68mJ | ||
Minimum Operating Temperature -55 °C | ||
Gate Capacitance 430pF | ||
- COO (Country of Origin):
- CN
IGBT Discretes, STMicroelectronics
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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