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STMicroelectronics STGD5NB120SZT4, Type N-Channel IGBT, 5 A 1200 V, 3-Pin TO-252, Surface

RS 제품 번호:: 877-2879
제조사 부품 번호:: STGD5NB120SZT4
제조업체:: STMicroelectronics

STMicroelectronics STGD5NB120SZT4, Type N-Channel IGBT, 5 A 1200 V, 3-Pin TO-252, Surface

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대량 구매 할인 기용 가능

Subtotal (1 pack of 5 units)*

₩17,690.80

재고있음

6,890 개 단위 배송 준비 완료

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수량	한팩당	한팩당*
5 - 620	₩3,538.16	₩17,690.80
625 - 1245	₩3,451.68	₩17,258.40
1250 +	₩3,395.28	₩16,976.40

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 877-2879
제조사 부품 번호:: STGD5NB120SZT4
제조업체:: STMicroelectronics

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	STMicroelectronics
	Product Type	IGBT
	Maximum Continuous Collector Current Ic	5A
	Maximum Collector Emitter Voltage Vceo	1200V
	Maximum Power Dissipation Pd	75W
	Package Type	TO-252
	Mount Type	Surface
	Channel Type	Type N
	Pin Count	3
	Switching Speed	690ns
	Maximum Collector Emitter Saturation Voltage VceSAT	2V
	Maximum Gate Emitter Voltage VGEO	±20 V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Length	6.2mm
	Height	2.2mm
	Width	6.4 mm
	Standards/Approvals	JEDEC JESD97, ECOPACK
	Series	H
	Automotive Standard	No
	Energy Rating	12.68mJ

	모두 선택
	브랜드 STMicroelectronics
	Product Type IGBT
	Maximum Continuous Collector Current Ic 5A
	Maximum Collector Emitter Voltage Vceo 1200V
	Maximum Power Dissipation Pd 75W
	Package Type TO-252
	Mount Type Surface
	Channel Type Type N
	Pin Count 3
	Switching Speed 690ns
	Maximum Collector Emitter Saturation Voltage VceSAT 2V
	Maximum Gate Emitter Voltage VGEO ±20 V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Length 6.2mm
	Height 2.2mm
	Width 6.4 mm
	Standards/Approvals JEDEC JESD97, ECOPACK
	Series H
	Automotive Standard No
	Energy Rating 12.68mJ

COO (Country of Origin):: CN

IGBT Discretes, STMicroelectronics

IGBT Discretes & Modules, STMicroelectronics

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

STMicroelectronics STGD5NB120SZT4, Type N-Channel IGBT, 5 A 1200 V, 3-Pin TO-252, Surface

IGBT Discretes, STMicroelectronics

IGBT Discretes & Modules, STMicroelectronics

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