STMicroelectronics STGD20N45LZAG IGBT, 25 A 475 V, 3-Pin DPAK, Surface Mount
- RS 제품 번호:
- 164-7025
- 제조사 부품 번호:
- STGD20N45LZAG
- 제조업체:
- STMicroelectronics
Subtotal (1 pack of 5 units)*
₩14,306.80
일시적 품절
- 2026년 4월 29일 부터 배송
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수량 | 한팩당 | 한팩당* |
|---|---|---|
| 5 + | ₩2,861.36 | ₩14,306.80 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 164-7025
- 제조사 부품 번호:
- STGD20N45LZAG
- 제조업체:
- STMicroelectronics
사양
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Maximum Continuous Collector Current | 25 A | |
| Maximum Collector Emitter Voltage | 475 V | |
| Maximum Gate Emitter Voltage | 16V | |
| Maximum Power Dissipation | 125 W | |
| Number of Transistors | 1 | |
| Package Type | DPAK | |
| Mounting Type | Surface Mount | |
| Channel Type | N | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Dimensions | 6.6 x 2.4 x 6.2mm | |
| Energy Rating | 300mJ | |
| Maximum Operating Temperature | +175 °C | |
| Automotive Standard | AEC-Q101 | |
| Minimum Operating Temperature | -55 °C | |
| Gate Capacitance | 1011pF | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Maximum Continuous Collector Current 25 A | ||
Maximum Collector Emitter Voltage 475 V | ||
Maximum Gate Emitter Voltage 16V | ||
Maximum Power Dissipation 125 W | ||
Number of Transistors 1 | ||
Package Type DPAK | ||
Mounting Type Surface Mount | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Dimensions 6.6 x 2.4 x 6.2mm | ||
Energy Rating 300mJ | ||
Maximum Operating Temperature +175 °C | ||
Automotive Standard AEC-Q101 | ||
Minimum Operating Temperature -55 °C | ||
Gate Capacitance 1011pF | ||
This application-specific IGBT utilizes the most advanced PowerMESH™ technology optimized for coil driving in the harsh environment of automotive ignition systems. These devices show very low on-state voltage and very high SCIS energy capability over a wide operating temperature range. Moreover, ESD-protected logic level gate input and an integrated gate resistor means no external protection circuitry is required.
SCIS energy of 300 mJ @ TJ = 25 °C
Parts are 100% tested in SCIS
ESD gate-emitter protection
Gate-collector high voltage clamping
Logic level gate drive
Very low saturation voltage
High pulsed current capability
Gate and gate-emitter resistor
Parts are 100% tested in SCIS
ESD gate-emitter protection
Gate-collector high voltage clamping
Logic level gate drive
Very low saturation voltage
High pulsed current capability
Gate and gate-emitter resistor
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
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