STMicroelectronics STGD18N40LZT4 IGBT, 30 A 420 V, 3-Pin DPAK (TO-252), Surface Mount
- RS 제품 번호:
- 795-9019
- 제조사 부품 번호:
- STGD18N40LZT4
- 제조업체:
- STMicroelectronics
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 tape of 5 units)*
₩10,941.60
일시적 품절
- 2026년 3월 25일 부터 2,470 개 단위 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | Per Tape* |
|---|---|---|
| 5 - 620 | ₩2,188.32 | ₩10,941.60 |
| 625 - 1245 | ₩2,131.92 | ₩10,659.60 |
| 1250 + | ₩2,101.84 | ₩10,509.20 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 795-9019
- 제조사 부품 번호:
- STGD18N40LZT4
- 제조업체:
- STMicroelectronics
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Maximum Continuous Collector Current | 30 A | |
| Maximum Collector Emitter Voltage | 420 V | |
| Maximum Gate Emitter Voltage | 16V | |
| Maximum Power Dissipation | 125 W | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Channel Type | N | |
| Pin Count | 3 | |
| Switching Speed | 1MHz | |
| Transistor Configuration | Single | |
| Dimensions | 6.6 x 6.2 x 2.4mm | |
| Minimum Operating Temperature | -55 °C | |
| Maximum Operating Temperature | +175 °C | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Maximum Continuous Collector Current 30 A | ||
Maximum Collector Emitter Voltage 420 V | ||
Maximum Gate Emitter Voltage 16V | ||
Maximum Power Dissipation 125 W | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Channel Type N | ||
Pin Count 3 | ||
Switching Speed 1MHz | ||
Transistor Configuration Single | ||
Dimensions 6.6 x 6.2 x 2.4mm | ||
Minimum Operating Temperature -55 °C | ||
Maximum Operating Temperature +175 °C | ||
IGBT Discretes, STMicroelectronics
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
관련된 링크들
- STMicroelectronics STGD18N40LZT4 IGBT, 30 A 420 V, 3-Pin DPAK (TO-252), Surface Mount
- STMicroelectronics STGD5H60DF IGBT, 10 A 600 V, 3-Pin DPAK (TO-252), Surface Mount
- STMicroelectronics STGD5NB120SZT4 IGBT, 10 A 1200 V, 3-Pin DPAK (TO-252), Surface Mount
- STMicroelectronics STGD20N45LZAG IGBT, 25 A 475 V, 3-Pin DPAK, Surface Mount
- STMicroelectronics STGB18N40LZT4 IGBT, 30 A 420 V, 3-Pin D2PAK (TO-263), Surface Mount
- STMicroelectronics STGD4H60DF Single Collector, Single Emitter, Single Gate IGBT, 4 A 600 V, 3-Pin DPAK, Surface Mount
- STMicroelectronics STGB10NB37LZT4 IGBT, 20 A 375 V, 3-Pin D2PAK (TO-263), Surface Mount
- onsemi FGD3440G2-F085 IGBT, 26.9 A 300 V, 3-Pin DPAK (TO-252), Surface Mount