제조사부품번호

STMicroelectronics STGD4H60DF Single Collector IGBT, 4 A 600 V, 3-Pin TO-252, Surface

RS 제품 번호:: 287-7045
제조사 부품 번호:: STGD4H60DF
제조업체:: STMicroelectronics

STMicroelectronics STGD4H60DF Single Collector IGBT, 4 A 600 V, 3-Pin TO-252, Surface

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

대량 구매 할인 기용 가능

Subtotal (1 pack of 2 units)*

₩3,647.20

재고있음

300 개 단위 배송 준비 완료

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	한팩당*
2 - 28	₩1,823.60	₩3,647.20
30 - 58	₩1,645.00	₩3,290.00
60 - 118	₩1,475.80	₩2,951.60
120 - 238	₩1,325.40	₩2,650.80
240 +	₩1,175.00	₩2,350.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 287-7045
제조사 부품 번호:: STGD4H60DF
제조업체:: STMicroelectronics

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	STMicroelectronics
	Product Type	IGBT
	Maximum Continuous Collector Current Ic	4A
	Maximum Collector Emitter Voltage Vceo	600V
	Number of Transistors	1
	Maximum Power Dissipation Pd	75W
	Configuration	Single Collector
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Minimum Operating Temperature	-55°C
	Maximum Collector Emitter Saturation Voltage VceSAT	1.7V
	Maximum Gate Emitter Voltage VGEO	20 V
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Height	2.3mm
	Length	1.7mm
	Width	6.7 mm
	Automotive Standard	No

	모두 선택
	브랜드 STMicroelectronics
	Product Type IGBT
	Maximum Continuous Collector Current Ic 4A
	Maximum Collector Emitter Voltage Vceo 600V
	Number of Transistors 1
	Maximum Power Dissipation Pd 75W
	Configuration Single Collector
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Minimum Operating Temperature -55°C
	Maximum Collector Emitter Saturation Voltage VceSAT 1.7V
	Maximum Gate Emitter Voltage VGEO 20 V
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Height 2.3mm
	Length 1.7mm
	Width 6.7 mm
	Automotive Standard No

Datasheet - STGD4H60DF

COO (Country of Origin):: CN

The STMicroelectronics Trench gate field stop is an IGBT developed using an Advanced proprietary trench gate field stop structure. This device is part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Moreover, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Low thermal resistance

Short circuit rated

Soft and fast recovery antiparallel diode

STMicroelectronics STGD4H60DF Single Collector IGBT, 4 A 600 V, 3-Pin TO-252, Surface

관련된 링크들