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STMicroelectronics, Type N-Channel IGBT, 25 A 450 V, 3-Pin TO-252, Surface

RS 제품 번호:: 164-6958
제조사 부품 번호:: STGD20N45LZAG
제조업체:: STMicroelectronics

STMicroelectronics, Type N-Channel IGBT, 25 A 450 V, 3-Pin TO-252, Surface

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Subtotal (1 reel of 2500 units)*

₩5,856,200.00

일시적 품절

2026년 7월 06일 부터 배송

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수량	한팩당	릴당*
2500 - 10000	₩2,342.48	₩5,857,610.00
12500 +	₩2,295.48	₩5,740,110.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 164-6958
제조사 부품 번호:: STGD20N45LZAG
제조업체:: STMicroelectronics

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	STMicroelectronics
	Maximum Continuous Collector Current Ic	25A
	Product Type	IGBT
	Maximum Collector Emitter Voltage Vceo	450V
	Maximum Power Dissipation Pd	150W
	Package Type	TO-252
	Mount Type	Surface
	Channel Type	Type N
	Pin Count	3
	Switching Speed	8.4μs
	Maximum Collector Emitter Saturation Voltage VceSAT	1.55V
	Minimum Operating Temperature	-55°C
	Maximum Gate Emitter Voltage VGEO	16 V
	Maximum Operating Temperature	175°C
	Series	Automotive Grade
	Width	6.2 mm
	Standards/Approvals	AEC-Q101
	Length	6.6mm
	Height	2.4mm
	Energy Rating	300mJ
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 STMicroelectronics
	Maximum Continuous Collector Current Ic 25A
	Product Type IGBT
	Maximum Collector Emitter Voltage Vceo 450V
	Maximum Power Dissipation Pd 150W
	Package Type TO-252
	Mount Type Surface
	Channel Type Type N
	Pin Count 3
	Switching Speed 8.4μs
	Maximum Collector Emitter Saturation Voltage VceSAT 1.55V
	Minimum Operating Temperature -55°C
	Maximum Gate Emitter Voltage VGEO 16 V
	Maximum Operating Temperature 175°C
	Series Automotive Grade
	Width 6.2 mm
	Standards/Approvals AEC-Q101
	Length 6.6mm
	Height 2.4mm
	Energy Rating 300mJ
	Automotive Standard AEC-Q101

This application-specific IGBT utilizes the most Advanced PowerMESH™ technology optimized for Coil driving in the harsh environment of automotive ignition systems. These devices show very low on-state voltage and very high SCIS energy capability over a wide operating temperature range. Moreover, ESD-protected logic level gate input and an integrated gate resistor means no external protection circuitry is required.

SCIS energy of 300 mJ @ TJ = 25 °C

Parts are 100% tested in SCIS

ESD gate-emitter protection

Gate-collector high voltage clamping

Logic level gate drive

Very low saturation voltage

High pulsed current capability

Gate and gate-emitter resistor

STMicroelectronics, Type N-Channel IGBT, 25 A 450 V, 3-Pin TO-252, Surface

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