STMicroelectronics STGD4H60DF Single Collector IGBT, 4 A 600 V, 3-Pin TO-252, Surface
- RS 제품 번호:
- 287-7044
- 제조사 부품 번호:
- STGD4H60DF
- 제조업체:
- STMicroelectronics
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Subtotal (1 reel of 2500 units)*
₩1,931,700.00
일시적 품절
- 2026년 6월 18일 부터 배송
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수량 | 한팩당 | 릴당* |
|---|---|---|
| 2500 + | ₩772.68 | ₩1,930,760.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 287-7044
- 제조사 부품 번호:
- STGD4H60DF
- 제조업체:
- STMicroelectronics
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 4A | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 75W | |
| Number of Transistors | 1 | |
| Configuration | Single Collector | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.7V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Height | 2.3mm | |
| Length | 1.7mm | |
| Width | 6.7 mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 4A | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 75W | ||
Number of Transistors 1 | ||
Configuration Single Collector | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.7V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Height 2.3mm | ||
Length 1.7mm | ||
Width 6.7 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics Trench gate field stop is an IGBT developed using an Advanced proprietary trench gate field stop structure. This device is part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Moreover, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
Low thermal resistance
Short circuit rated
Soft and fast recovery antiparallel diode
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