STMicroelectronics STGWA25IH135DF2, Bi-Directional-Channel Single Collector IGBT, 25 A 1350 V, 3-Pin TO-247, Through
- RS 제품 번호:
- 275-1345
- 제조사 부품 번호:
- STGWA25IH135DF2
- 제조업체:
- STMicroelectronics
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Subtotal (1 tube of 30 units)*
₩126,054.00
재고있음
- 추가로 2026년 3월 30일 부터 120 개 단위 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | Per Tube* |
|---|---|---|
| 30 + | ₩4,201.80 | ₩126,070.92 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 275-1345
- 제조사 부품 번호:
- STGWA25IH135DF2
- 제조업체:
- STMicroelectronics
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 25A | |
| Maximum Collector Emitter Voltage Vceo | 1350V | |
| Number of Transistors | 1 | |
| Maximum Power Dissipation Pd | 340W | |
| Configuration | Single Collector | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Bi-Directional | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.2V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Length | 19.92mm | |
| Height | 21mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 25A | ||
Maximum Collector Emitter Voltage Vceo 1350V | ||
Number of Transistors 1 | ||
Maximum Power Dissipation Pd 340W | ||
Configuration Single Collector | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Bi-Directional | ||
Pin Count 3 | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.2V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Length 19.92mm | ||
Height 21mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics IGBT 1350 V IH2 series has been developed using an Advanced proprietary trench gate field stop structure, whose performance is optimized both in conduction and switching losses for soft commutation. A freewheeling diode with a low drop forward voltage is included. The result is a product specifically designed to maximize efficiency for any resonant and soft switching applications.
Designed for soft commutation
Minimized tail current
Tight parameter distribution
Low thermal resistance
관련된 링크들
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