Infineon IKW50N65H5FKSA1 IGBT Transistor Module, 80 A 650 V PG-TO247-3
- RS 제품 번호:
- 259-1534
- 제조사 부품 번호:
- IKW50N65H5FKSA1
- 제조업체:
- Infineon
Subtotal (1 tube of 30 units)*
₩111,446.40
일시적 품절
- 2025년 12월 29일 부터 240 개 단위 배송
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수량 | 한팩당 | Per Tube* |
|---|---|---|
| 30 + | ₩3,714.88 | ₩111,446.40 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 259-1534
- 제조사 부품 번호:
- IKW50N65H5FKSA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Maximum Continuous Collector Current | 80 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 305 W | |
| Package Type | PG-TO247-3 | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Maximum Continuous Collector Current 80 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 305 W | ||
Package Type PG-TO247-3 | ||
The Infineon high speed IGBT5 is co-packed with RAPID 1 fast and soft anti-parallel diode in a TO-247 package, is defined as "best-in-class" IGBT. It has Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability. 50 V increase in the bus voltage possible without compromising reliability.
650 V breakthrough voltage
Compared to best-in-class HighSpeed 3 family
Factor 2.5 lower Qg
Factor 2 reduction in switching losses
200mV reduction in VCEsat
Co-packed with Rapid Si-diode technology
Low COES/EOSS
Mild positive temperature coefficient VCEsa
Compared to best-in-class HighSpeed 3 family
Factor 2.5 lower Qg
Factor 2 reduction in switching losses
200mV reduction in VCEsat
Co-packed with Rapid Si-diode technology
Low COES/EOSS
Mild positive temperature coefficient VCEsa
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
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