Infineon IGBT Module, 50 A 650 V, 3-Pin PG-TO-247
- RS 제품 번호:
- 259-1532
- 제조사 부품 번호:
- IKW50N65F5FKSA1
- 제조업체:
- Infineon
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
현재 비가용
죄송합니다. 언제 재입고될지 모릅니다.
- RS 제품 번호:
- 259-1532
- 제조사 부품 번호:
- IKW50N65F5FKSA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Maximum Continuous Collector Current Ic | 50A | |
| Product Type | IGBT Module | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 305W | |
| Package Type | PG-TO-247 | |
| Pin Count | 3 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.6V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | ±20 ±30 V | |
| Maximum Operating Temperature | 175°C | |
| Width | 16.13mm | |
| Length | 41.42mm | |
| Standards/Approvals | JEDEC, RoHS | |
| Series | High Speed Fifth Generation | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Maximum Continuous Collector Current Ic 50A | ||
Product Type IGBT Module | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 305W | ||
Package Type PG-TO-247 | ||
Pin Count 3 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.6V | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO ±20 ±30 V | ||
Maximum Operating Temperature 175°C | ||
Width 16.13mm | ||
Length 41.42mm | ||
Standards/Approvals JEDEC, RoHS | ||
Series High Speed Fifth Generation | ||
Automotive Standard No | ||
The Infineon high speed hard-switching IGBT is co-packed with RAPID 1 fast and soft anti-parallel diode in a TO-247 package, is defined as "best-in-class" IGBT. It has best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability. 50 V increase in the bus voltage possible without compromising reliability.
650 V breakthrough voltage
Compared to best-in-class HighSpeed 3 family
Factor 2.5 lower Qg
Factor 2 reduction in switching losses
200mV reduction in VCEsat
Co-packed with Rapid Si-diode technology
Low COES/EOSS
Mild positive temperature coefficient VCEsa
관련된 링크들
- Infineon IGBT Module, 50 A 650 V, 3-Pin PG-TO-247
- Infineon IKW50N65F5FKSA1 IGBT Module, 50 A 650 V, 3-Pin PG-TO-247
- Infineon IKW50N65H5FKSA1 IGBT Module, 50 A 650 V, 3-Pin PG-TO-247
- Infineon IGBT Module, 80 A 650 V, 3-Pin PG-TO-247
- Infineon IGBT Module, 75 A 650 V PG-TO-247
- Infineon IKW50N65RH5XKSA1 IGBT Module, 50 A 650 V, 3-Pin PG-TO-247
- Infineon IGW50N65F5FKSA1 IGBT Module, 50 A 650 V, 3-Pin PG-TO-247
- Infineon IGBT Module, 40 A 650 V, 3-Pin PG-TO-247