제조사부품번호

Infineon IGW50N65F5FKSA1 IGBT Module, 50 A 650 V, 3-Pin PG-TO-247

RS 제품 번호:: 259-1527
제조사 부품 번호:: IGW50N65F5FKSA1
제조업체:: Infineon

Infineon IGW50N65F5FKSA1 IGBT Module, 50 A 650 V, 3-Pin PG-TO-247

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

대량 구매 할인 기용 가능

Subtotal (1 pack of 2 units)*

₩13,592.40

재고있음

182 개 단위 배송 준비 완료

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	한팩당*
2 - 8	₩6,796.20	₩13,592.40
10 - 24	₩6,110.00	₩12,220.00
26 - 98	₩6,091.20	₩12,182.40
100 - 198	₩5,000.80	₩10,001.60
200 +	₩4,859.80	₩9,719.60

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 259-1527
제조사 부품 번호:: IGW50N65F5FKSA1
제조업체:: Infineon

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	IGBT Module
	Maximum Continuous Collector Current Ic	50A
	Maximum Collector Emitter Voltage Vceo	650V
	Maximum Power Dissipation Pd	305W
	Package Type	PG-TO-247
	Pin Count	3
	Maximum Collector Emitter Saturation Voltage VceSAT	1.6V
	Maximum Gate Emitter Voltage VGEO	±20 ±30 V
	Minimum Operating Temperature	-40°C
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS, JEDEC
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type IGBT Module
	Maximum Continuous Collector Current Ic 50A
	Maximum Collector Emitter Voltage Vceo 650V
	Maximum Power Dissipation Pd 305W
	Package Type PG-TO-247
	Pin Count 3
	Maximum Collector Emitter Saturation Voltage VceSAT 1.6V
	Maximum Gate Emitter Voltage VGEO ±20 ±30 V
	Minimum Operating Temperature -40°C
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS, JEDEC
	Automotive Standard No

Datasheet - IGW50N65F5FKSA1

The Infineon new TRENCHSTOPIGBT technology redefines “Best-in-class” IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the market’s high efficiency demands of tomorrow. It has best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability. 50V increase in the bus voltage possible without compromising reliability.

650V breakthrough voltage

Compared to Infineon’s Best-in-class HighSpeed 3 family

Factor 2.5 lower Q g

Factor 2 reduction in switching losses

200mV reduction in V CE(sat)

Low C OES/E OSS

Mild positive temperature coefficient V CE(sat)

Temperature stabilit

Infineon IGW50N65F5FKSA1 IGBT Module, 50 A 650 V, 3-Pin PG-TO-247

관련된 링크들