Infineon IGW50N65F5FKSA1 IGBT Transistor Module, 80 A 650 V PG-TO247-3
- RS 제품 번호:
- 259-1526
- 제조사 부품 번호:
- IGW50N65F5FKSA1
- 제조업체:
- Infineon
Subtotal (1 tube of 30 units)*
₩132,991.20
재고있음
- 추가로 2025년 12월 29일 부터 180 개 단위 배송
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수량 | 한팩당 | Per Tube* |
|---|---|---|
| 30 + | ₩4,433.04 | ₩132,991.20 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 259-1526
- 제조사 부품 번호:
- IGW50N65F5FKSA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Maximum Continuous Collector Current | 80 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 305 W | |
| Package Type | PG-TO247-3 | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Maximum Continuous Collector Current 80 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 305 W | ||
Package Type PG-TO247-3 | ||
The Infineon new TRENCHSTOPIGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. It has best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability. 50V increase in the bus voltage possible without compromising reliability.
650V breakthrough voltage
Compared to Infineons Best-in-class HighSpeed 3 family
Factor 2.5 lower Q g
Factor 2 reduction in switching losses
200mV reduction in V CE(sat)
Low C OES/E OSS
Mild positive temperature coefficient V CE(sat)
Temperature stabilit
Compared to Infineons Best-in-class HighSpeed 3 family
Factor 2.5 lower Q g
Factor 2 reduction in switching losses
200mV reduction in V CE(sat)
Low C OES/E OSS
Mild positive temperature coefficient V CE(sat)
Temperature stabilit
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
관련된 링크들
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