Infineon IHW30N135R5XKSA1, N-Channel IGBT, 30 A 1350 V, 3-Pin TO-247, Through Hole

RS 제품 번호:: 218-4397
제조사 부품 번호:: IHW30N135R5XKSA1
제조업체:: Infineon

Infineon IHW30N135R5XKSA1, N-Channel IGBT, 30 A 1350 V, 3-Pin TO-247, Through Hole

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

대량 구매 할인 기용 가능

View bulk pricing options

Subtotal (1 pack of 5 units)*

₩38,660.00

35 개 단위 배송 준비 완료
추가로 2027년 10월 07일 부터 240 개 단위 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	한팩당*
5 - 5	₩7,732.00	₩38,660.00
10 - 10	₩7,536.00	₩37,680.00
15 +	₩7,428.00	₩37,140.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 218-4397
제조사 부품 번호:: IHW30N135R5XKSA1
제조업체:: Infineon

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Maximum Continuous Collector Current Ic	30A
	Product Type	IGBT
	Maximum Collector Emitter Voltage Vceo	1350V
	Maximum Power Dissipation Pd	330W
	Number of Transistors	1
	Package Type	TO-247
	Mount Type	Through Hole
	Channel Type	N
	Pin Count	3
	Maximum Collector Emitter Saturation Voltage VceSAT	1.65V
	Minimum Operating Temperature	-40°C
	Maximum Gate Emitter Voltage VGEO	±20 ±25 V
	Maximum Operating Temperature	175°C
	Standards/Approvals	JESD-022
	Length	21.1mm
	Series	IHW30N135R5
	Width	16.13mm
	Height	5.21mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Maximum Continuous Collector Current Ic 30A
	Product Type IGBT
	Maximum Collector Emitter Voltage Vceo 1350V
	Maximum Power Dissipation Pd 330W
	Number of Transistors 1
	Package Type TO-247
	Mount Type Through Hole
	Channel Type N
	Pin Count 3
	Maximum Collector Emitter Saturation Voltage VceSAT 1.65V
	Minimum Operating Temperature -40°C
	Maximum Gate Emitter Voltage VGEO ±20 ±25 V
	Maximum Operating Temperature 175°C
	Standards/Approvals JESD-022
	Length 21.1mm
	Series IHW30N135R5
	Width 16.13mm
	Height 5.21mm
	Automotive Standard No

Datasheet - IHW30N135R5XKSA1

Infineon IHW30N135R5 Series IGBT, 330W Maximum Power Dissipation, 30A Max Continuous Collector Current - IHW30N135R5XKSA1

This IGBT is a high-voltage switching transistor designed for power conversion and control in demanding industrial environments. It is supplied in a TO-247 through-hole package with three pins and is intended for applications requiring elevated voltage handling and substantial current conduction while operating across a wide temperature range.

Features and Benefits:

• 1350 V rating enables operation in high-voltage systems
• 30 A continuous current supports heavy load driving
• 330 W power dissipation allows sustained power handling
• 1.65 V VCE(sat) yields reduced conduction losses under load
• ±20 V gate-emitter tolerance permits robust gate drive swings
• −40 °C to 175 °C temperature range maintains performance in harsh environments

Applications

• Suitable for high-voltage motor drive stages
• Ideal for industrial inverter and converter designs
• Used with power supplies requiring through-hole mounting
• Can be used for traction and utility power electronics
• Appropriate for fast-switching high-voltage circuits

What is the device’s package and mounting style?

It is supplied in a TO-247 package and designed for through-hole mounting on power assemblies.

How does the device behave thermally under continuous operation?

It can dissipate up to 330 W and is specified for operation up to 175 °C case or junction temperatures.

What gate drive limits must be observed?

The gate-emitter rating is ±20 V, so drive circuits should remain within that voltage range.

What switching or conduction capability is provided for load design?

The device supports continuous collector currents up to 30 A with a maximum collector-emitter saturation of 1.65 V.

Are there recognised standards associated with the device?

It conforms to JESD-022 moisture sensitivity classification for handling and storage.