제조사부품번호

Infineon IHW30N160R5XKSA1, N-Channel IGBT, 30 A 1600 V, 3-Pin TO-247, Through Hole

RS 제품 번호:: 218-4398
제조사 부품 번호:: IHW30N160R5XKSA1
제조업체:: Infineon

Infineon IHW30N160R5XKSA1, N-Channel IGBT, 30 A 1600 V, 3-Pin TO-247, Through Hole

대량 구매 할인 기용 가능

View bulk pricing options

Subtotal (1 tube of 30 units)*

₩157,020.00

1,650 개 단위 배송 준비 완료
추가로 2026년 10월 22일 부터 240 개 단위 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	Per Tube*
30 - 30	₩5,234.00	₩157,020.00
60 - 90	₩5,120.00	₩153,618.00
120 +	₩5,008.00	₩150,240.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 218-4398
제조사 부품 번호:: IHW30N160R5XKSA1
제조업체:: Infineon

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Maximum Continuous Collector Current Ic	30A
	Product Type	IGBT
	Maximum Collector Emitter Voltage Vceo	1600V
	Maximum Power Dissipation Pd	263W
	Number of Transistors	1
	Package Type	TO-247
	Mount Type	Through Hole
	Channel Type	N
	Pin Count	3
	Minimum Operating Temperature	-40°C
	Maximum Collector Emitter Saturation Voltage VceSAT	1.85V
	Maximum Gate Emitter Voltage VGEO	±20 ±25 V
	Maximum Operating Temperature	175°C
	Series	IHW30N160R5
	Standards/Approvals	JEDEC47/20/22
	Width	16.3mm
	Height	5.3mm
	Length	21.5mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Maximum Continuous Collector Current Ic 30A
	Product Type IGBT
	Maximum Collector Emitter Voltage Vceo 1600V
	Maximum Power Dissipation Pd 263W
	Number of Transistors 1
	Package Type TO-247
	Mount Type Through Hole
	Channel Type N
	Pin Count 3
	Minimum Operating Temperature -40°C
	Maximum Collector Emitter Saturation Voltage VceSAT 1.85V
	Maximum Gate Emitter Voltage VGEO ±20 ±25 V
	Maximum Operating Temperature 175°C
	Series IHW30N160R5
	Standards/Approvals JEDEC47/20/22
	Width 16.3mm
	Height 5.3mm
	Length 21.5mm
	Automotive Standard No

IHW30N160R5XKSA1 Datasheet

Infineon IHW30N160R5 Series IGBT, 1600V Collector-Emitter Voltage, 30A Collector Current - IHW30N160R5XKSA1

This IGBT is a high-voltage, through‑hole transistor designed for power switching in demanding industrial environments. It operates as an N‑channel device in a TO‑247 package and is intended for applications requiring substantial current handling and elevated temperature tolerance.

Features and Benefits:

• Handles continuous collector current of 30 A for sustained loads
• Withstands collector-emitter voltage of 1600 V for high‑voltage systems
• Power dissipation rating of 263 W supports heavy switching duty
• Low collector-emitter saturation voltage of 1.85 V reduces conduction losses
• Gate-emitter voltage tolerance of ±20-25 V permits robust gate‑drive margins
• Qualified to JEDEC 47/20/22 for standardised thermal and mechanical resilience

Applications

• Suitable for industrial high‑voltage inverter stages
• Used for medium‑power traction and motor‑drive modules
• Ideal for high‑voltage DC-DC conversion circuits
• Can be used for power supplies in industrial automation
• Used with thermal‑management systems operating at elevated temperatures

What operating temperature range can it tolerate?

It functions across −40 °C to 175 °C, enabling use in wide thermal environments.

How many transistor elements are contained within the device?

The package contains a single transistor element for discrete switching.

What mounting method and package type does it use?

It is supplied for through‑hole mounting in a TO‑247 package.

Are there any approvals for mechanical and thermal testing?

It meets JEDEC 47/20/22 standards covering thermal cycling and related tests.