Infineon IHW30N135R5XKSA1, N-Channel IGBT, 30 A 1350 V, 3-Pin TO-247, Through Hole
- RS 제품 번호:
- 218-4395
- 제조사 부품 번호:
- IHW30N135R5XKSA1
- 제조업체:
- Infineon
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (1 tube of 30 units)*
₩133,020.00
재고있음
- 30 개 단위 배송 준비 완료
- 추가로 2027년 10월 07일 부터 240 개 단위 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | Per Tube* |
|---|---|---|
| 30 - 30 | ₩4,434.00 | ₩133,038.00 |
| 60 - 90 | ₩4,338.00 | ₩130,140.00 |
| 120 + | ₩4,242.00 | ₩127,278.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 218-4395
- 제조사 부품 번호:
- IHW30N135R5XKSA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Maximum Continuous Collector Current Ic | 30A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 1350V | |
| Maximum Power Dissipation Pd | 330W | |
| Number of Transistors | 1 | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.65V | |
| Maximum Gate Emitter Voltage VGEO | ±20 ±25 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 16.13mm | |
| Series | IHW30N135R5 | |
| Length | 21.1mm | |
| Standards/Approvals | JESD-022 | |
| Height | 5.21mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Maximum Continuous Collector Current Ic 30A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 1350V | ||
Maximum Power Dissipation Pd 330W | ||
Number of Transistors 1 | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.65V | ||
Maximum Gate Emitter Voltage VGEO ±20 ±25 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Width 16.13mm | ||
Series IHW30N135R5 | ||
Length 21.1mm | ||
Standards/Approvals JESD-022 | ||
Height 5.21mm | ||
Automotive Standard No | ||
Infineon IHW30N135R5 Series IGBT, 330W Maximum Power Dissipation, 30A Max Continuous Collector Current - IHW30N135R5XKSA1
This IGBT is a high-voltage switching transistor designed for power conversion and control in demanding industrial environments. It is supplied in a TO-247 through-hole package with three pins and is intended for applications requiring elevated voltage handling and substantial current conduction while operating across a wide temperature range.
Features and Benefits:
• 1350 V rating enables operation in high-voltage systems
• 30 A continuous current supports heavy load driving
• 330 W power dissipation allows sustained power handling
• 1.65 V VCE(sat) yields reduced conduction losses under load
• ±20 V gate-emitter tolerance permits robust gate drive swings
• −40 °C to 175 °C temperature range maintains performance in harsh environments
• 30 A continuous current supports heavy load driving
• 330 W power dissipation allows sustained power handling
• 1.65 V VCE(sat) yields reduced conduction losses under load
• ±20 V gate-emitter tolerance permits robust gate drive swings
• −40 °C to 175 °C temperature range maintains performance in harsh environments
Applications
• Suitable for high-voltage motor drive stages
• Ideal for industrial inverter and converter designs
• Used with power supplies requiring through-hole mounting
• Can be used for traction and utility power electronics
• Appropriate for fast-switching high-voltage circuits
• Ideal for industrial inverter and converter designs
• Used with power supplies requiring through-hole mounting
• Can be used for traction and utility power electronics
• Appropriate for fast-switching high-voltage circuits
What is the devices package and mounting style?
It is supplied in a TO-247 package and designed for through-hole mounting on power assemblies.
How does the device behave thermally under continuous operation?
It can dissipate up to 330 W and is specified for operation up to 175 °C case or junction temperatures.
What gate drive limits must be observed?
The gate-emitter rating is ±20 V, so drive circuits should remain within that voltage range.
What switching or conduction capability is provided for load design?
The device supports continuous collector currents up to 30 A with a maximum collector-emitter saturation of 1.65 V.
Are there recognised standards associated with the device?
It conforms to JESD-022 moisture sensitivity classification for handling and storage.
관련된 링크들
- Infineon IHW30N135R5XKSA1, N-Channel IGBT, 30 A 1350 V, 3-Pin TO-247, Through Hole
- Infineon, N-Channel Reverse Conducting IGBT, 80 A 1350 V, 3-Pin TO-247, Through Hole
- Infineon, N-Channel IGBT Single Transistor IC, 40 A 1350 V, 3-Pin TO-247, Through Hole
- Infineon IHW40N135R5XKSA1, N-Channel Reverse Conducting IGBT, 80 A 1350 V, 3-Pin TO-247, Through Hole
- Infineon IHW20N135R5XKSA1, N-Channel IGBT Single Transistor IC, 40 A 1350 V, 3-Pin TO-247, Through Hole
- Infineon IHW30N135R3FKSA1 IGBT, 30 A 1350 V, 3-Pin TO-247, Through Hole
- Infineon, N-Channel IGBT, 30 A 1600 V, 3-Pin TO-247, Through Hole
- Infineon IGBT, 30 A 1100 V, 3-Pin TO-247
