onsemi AFGB40T65SQDN, N-Channel IGBT, 80 A 650 V, 3-Pin TO-263, Surface
- RS 제품 번호:
- 185-7972
- 제조사 부품 번호:
- AFGB40T65SQDN
- 제조업체:
- onsemi
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대량 구매 할인 받기
1600개 더 담고 1% 할인 받기
View bulk pricing optionsSubtotal (1 reel of 800 units)*
₩4,494,400.00
제한된 재고
- 2,400 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 릴당* | 절감 |
|---|---|---|---|
| 800 - 800 | ₩5,618.00 | ₩4,494,560.00 | - |
| 1600 - 2400 | ₩5,506.00 | ₩4,404,640.00 | 1% |
| 3200 + | ₩5,396.00 | ₩4,316,640.00 | 3% |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 185-7972
- 제조사 부품 번호:
- AFGB40T65SQDN
- 제조업체:
- onsemi
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Maximum Continuous Collector Current Ic | 80A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 238W | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Channel Type | N | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.6V | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 9.65mm | |
| Standards/Approvals | RoHS, Pb-Free | |
| Width | 10.67mm | |
| Height | 4.06mm | |
| Automotive Standard | AEC-Q101 | |
| Energy Rating | 22.3mJ | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Maximum Continuous Collector Current Ic 80A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 238W | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Channel Type N | ||
Pin Count 3 | ||
Minimum Operating Temperature -55°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.6V | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Operating Temperature 175°C | ||
Length 9.65mm | ||
Standards/Approvals RoHS, Pb-Free | ||
Width 10.67mm | ||
Height 4.06mm | ||
Automotive Standard AEC-Q101 | ||
Energy Rating 22.3mJ | ||
비준수
- COO (Country of Origin):
- CN
Using the novel field stop 4th generation IGBT technology. AFGB40T65SQDN offers the optimum performance with both low conduction loss and switching loss for a high efficiency operation in various applications.
VCE(sat) = 1.6 V (typ.) @ IC = 40 A
Low VF soft recovery co-packaged diode
For automotive
Low conduction loss
Low noise and conduction loss
Applications
Automotive On Board Charge
Automotive DC/DC converter for HEV
End Products
EV/PHEV
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