onsemi, N-Channel IGBT, 80 A 650 V, 3-Pin TO-3PF, Through Hole
- RS 제품 번호:
- 185-7999
- 제조사 부품 번호:
- FGAF40S65AQ
- 제조업체:
- onsemi
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 받기
720개 더 담고 ₩44,640.00 할인 받기
View bulk pricing optionsSubtotal (1 tube of 360 units)*
₩1,087,920.00
마지막 RS 재고
- 최종적인 360 개 unit(s)이 배송 준비 됨
수량 | 한팩당 | Per Tube* | 절감 |
|---|---|---|---|
| 360 - 360 | ₩3,022.00 | ₩1,087,704.00 | - |
| 720 - 1080 | ₩2,960.00 | ₩1,065,888.00 | ₩44,640.00 |
| 1440 + | ₩2,902.00 | ₩1,044,576.00 | ₩172,800.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 185-7999
- 제조사 부품 번호:
- FGAF40S65AQ
- 제조업체:
- onsemi
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Maximum Continuous Collector Current Ic | 80A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 94W | |
| Package Type | TO-3PF | |
| Mount Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.6V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | Pb-Free and is RoHS | |
| Width | 15.3mm | |
| Series | Trench | |
| Length | 19.1mm | |
| Energy Rating | 325mJ | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Maximum Continuous Collector Current Ic 80A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 94W | ||
Package Type TO-3PF | ||
Mount Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.6V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals Pb-Free and is RoHS | ||
Width 15.3mm | ||
Series Trench | ||
Length 19.1mm | ||
Energy Rating 325mJ | ||
Automotive Standard No | ||
비준수
- COO (Country of Origin):
- KR
Using novel field stop IGBT technology, ON semiconductor’s new series of field stop 4th generation of RC IGBTs offer the optimum performance for converter PFC stage of consummer and industrial applications.
Maximum junction temperature : TJ = 175°C
Positive temperaure co-efficient for easy parallel operating
High current capability
Low saturation voltage: VCE(sat) = 1.6V(Typ.) @ IC = 40A
High input impedance
100% of the Parts tested for ILM
Fast switching
Tightened parameter distribution
IGBT with monolithic reverse conducting diode
Applications
Consumer Appliances
PFC, Welder
Industrial application
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