제조사부품번호

STMicroelectronics, Type N-Channel IGBT, 25 A 450 V, 3-Pin TO-263, Surface

RS 제품 번호:: 164-6956
제조사 부품 번호:: STGB20N45LZAG
제조업체:: STMicroelectronics

STMicroelectronics, Type N-Channel IGBT, 25 A 450 V, 3-Pin TO-263, Surface

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대량 구매 할인 기용 가능

Subtotal (1 reel of 1000 units)*

₩2,929,040.00

현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.

수량	한팩당	릴당*
1000 - 4000	₩2,929.04	₩2,929,228.00
5000 +	₩2,870.76	₩2,870,572.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 164-6956
제조사 부품 번호:: STGB20N45LZAG
제조업체:: STMicroelectronics

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모두 선택	제품 정보	값
	브랜드	STMicroelectronics
	Product Type	IGBT
	Maximum Continuous Collector Current Ic	25A
	Maximum Collector Emitter Voltage Vceo	450V
	Maximum Power Dissipation Pd	150W
	Package Type	TO-263
	Mount Type	Surface
	Channel Type	Type N
	Pin Count	3
	Switching Speed	8.4μs
	Maximum Gate Emitter Voltage VGEO	16 V
	Minimum Operating Temperature	-55°C
	Maximum Collector Emitter Saturation Voltage VceSAT	1.55V
	Maximum Operating Temperature	175°C
	Standards/Approvals	AEC-Q101
	Width	9.35 mm
	Height	4.6mm
	Length	10.4mm
	Series	Automotive Grade
	Automotive Standard	AEC-Q101
	Energy Rating	300mJ

	모두 선택
	브랜드 STMicroelectronics
	Product Type IGBT
	Maximum Continuous Collector Current Ic 25A
	Maximum Collector Emitter Voltage Vceo 450V
	Maximum Power Dissipation Pd 150W
	Package Type TO-263
	Mount Type Surface
	Channel Type Type N
	Pin Count 3
	Switching Speed 8.4μs
	Maximum Gate Emitter Voltage VGEO 16 V
	Minimum Operating Temperature -55°C
	Maximum Collector Emitter Saturation Voltage VceSAT 1.55V
	Maximum Operating Temperature 175°C
	Standards/Approvals AEC-Q101
	Width 9.35 mm
	Height 4.6mm
	Length 10.4mm
	Series Automotive Grade
	Automotive Standard AEC-Q101
	Energy Rating 300mJ

This application-specific IGBT utilizes the most Advanced PowerMESH™ technology optimized for Coil driving in the harsh environment of automotive ignition systems. These devices show very low on-state voltage and very high SCIS energy capability over a wide operating temperature range. Moreover, ESD-protected logic level gate input and an integrated gate resistor means no external protection circuitry is required

SCIS energy of 300 mJ @ TJ = 25 °C

Parts are 100% tested in SCIS

ESD gate-emitter protection

Gate-collector high voltage clamping

Logic level gate drive

Very low saturation voltage

High pulsed current capability

Gate and gate-emitter resistor

STMicroelectronics, Type N-Channel IGBT, 25 A 450 V, 3-Pin TO-263, Surface

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