STMicroelectronics STGB20N45LZAG IGBT, 25 A 475 V, 3-Pin D2PAK, Surface Mount
- RS 제품 번호:
- 164-6956
- 제조사 부품 번호:
- STGB20N45LZAG
- 제조업체:
- STMicroelectronics
대량 구매 할인 기용 가능
Subtotal (1 reel of 1000 units)*
₩2,724,120.00
일시적 품절
- 2026년 4월 27일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 릴당* |
|---|---|---|
| 1000 - 4000 | ₩2,724.12 | ₩2,724,496.00 |
| 5000 + | ₩2,669.60 | ₩2,669,976.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 164-6956
- 제조사 부품 번호:
- STGB20N45LZAG
- 제조업체:
- STMicroelectronics
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Maximum Continuous Collector Current | 25 A | |
| Maximum Collector Emitter Voltage | 475 V | |
| Maximum Gate Emitter Voltage | 16V | |
| Maximum Power Dissipation | 150 W | |
| Number of Transistors | 1 | |
| Package Type | D2PAK | |
| Mounting Type | Surface Mount | |
| Channel Type | N | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Dimensions | 10.4 x 4.6 x 9.35mm | |
| Automotive Standard | AEC-Q101 | |
| Energy Rating | 300mJ | |
| Minimum Operating Temperature | -55 °C | |
| Gate Capacitance | 1011pF | |
| Maximum Operating Temperature | +175 °C | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Maximum Continuous Collector Current 25 A | ||
Maximum Collector Emitter Voltage 475 V | ||
Maximum Gate Emitter Voltage 16V | ||
Maximum Power Dissipation 150 W | ||
Number of Transistors 1 | ||
Package Type D2PAK | ||
Mounting Type Surface Mount | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Dimensions 10.4 x 4.6 x 9.35mm | ||
Automotive Standard AEC-Q101 | ||
Energy Rating 300mJ | ||
Minimum Operating Temperature -55 °C | ||
Gate Capacitance 1011pF | ||
Maximum Operating Temperature +175 °C | ||
This application-specific IGBT utilizes the most advanced PowerMESH™ technology optimized for coil driving in the harsh environment of automotive ignition systems. These devices show very low on-state voltage and very high SCIS energy capability over a wide operating temperature range. Moreover, ESD-protected logic level gate input and an integrated gate resistor means no external protection circuitry is required
SCIS energy of 300 mJ @ TJ = 25 °C
Parts are 100% tested in SCIS
ESD gate-emitter protection
Gate-collector high voltage clamping
Logic level gate drive
Very low saturation voltage
High pulsed current capability
Gate and gate-emitter resistor
Parts are 100% tested in SCIS
ESD gate-emitter protection
Gate-collector high voltage clamping
Logic level gate drive
Very low saturation voltage
High pulsed current capability
Gate and gate-emitter resistor
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
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